专利汇可以提供METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES专利检索,专利查询,专利分析的服务。并且A method is described for forming gate structures with different metals on a single substrate. A thin semiconductor cap (26) is formed over gate dielectric (24) and patterned to be present in a first region (16) not a second region (18). Then, metal (30) and a second cap (34) is deposited and patterned to be present in the second region not the first. A thick selectively etchable layer for example of SIGe is deposited, the gates are patterned in both first and second regions, and the selectively etchable layer is removed. A metal layer is deposited and reacted with the first and second caps to form fully suicided or fully germanided layers.,下面是METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES专利的具体信息内容。
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