专利汇可以提供EUV LIGHT SOURCE FOR AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS专利检索,专利查询,专利分析的服务。并且The invention concerns an EUV light source for an illumination system of a microlithographic projection exposure apparatus. According to an aspect of the invention, an EUV light source has a radiation source unit (105), at least one target source (135) for feeding target material (132) into the beam path of the radiation source unit (105) in such a way that said target material can be excited at at least one plasma ignition position (130) by the radiation (106) produced by the radiation source unit (105) into a plasma state with the emission of EUV radiation (138), a primary mirror which forms a collector mirror (110) and which at least partially reflects EUV radiation (138) emitted by the target material (132) in such a way that the reflected EUV radiation passes into the illumination system, and a secondary mirror (120) which reflects a beam produced by the radiation source unit (105) and focuses it on to the plasma ignition position (130), wherein the beam reflected at the secondary mirror (120) after reflection at the secondary mirror (120) has a numerical aperture greater than the numerical aperture of said beam prior to reflection at the secondary mirror (120) and wherein radiation (137) reflected at the target material (132) in the plasma ignition position after focusing by the secondary mirror (120) is at least predominantly not incident on the collector mirror (110).,下面是EUV LIGHT SOURCE FOR AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS专利的具体信息内容。
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