Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print专利检索-投影光刻微电子学专利检索查询-专利查询网

Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print

阅读：115发布：2023-10-08

专利汇可以提供Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print专利检索，专利查询，专利分析的服务。并且A substrate covered with photoresist is positioned in a parallel, spaced, fixed relationship to a photomask to form a photomask assembly. Then, the photoresist is exposed to a diffraction image of the photomask by projecting collimated light through the photomask. The diffraction image comprises a primary image and a spurious, diffraction-associated secondary image. The light is projected with an oblique orientation to the photomask. The oblique orientation is varied during the exposing to selectively prevent the secondary image from resulting in the uncovering of corresponding areas of the substrate upon development. Then the photoresist is developed to uncover selected areas of the substrate.，下面是Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print专利的具体信息内容。

权利要求

1. A method of projection printing, comprising: positioning a substantially flat substrate surface covered with a layer of photoresist in a parallel, spaced, fixed relationship to a substantially flat photomask to form a photomask assembly; exposing said photoresist layer to a diffraction image of said photomask by the projection of substantially monochromatic, collimated light through said photomask incident on said layer, said diffraction image comprising a primary image corresponding to the pattern of said photomask and a spurious diffractionassociated secondary image, and then developing said exposed photoresist layer to uncover selected areas of said substrate surface, wherein the improvement comprises: projecting said light with an oblique orientation to the plane of said photomask during said exposing, said oblique orientation being determined by an oblique angle between the direction of collimation of said light and an orthogonal line to said photomask, and by a rotational angle between a fixed reference line in the plane of said photomask and a projection of the direction of said light intersecting said fixed line in said plane of said photomask, and then varying said orientation of said light during said exposing to selectively prevent said secondary image from resulting in the uncovering of corresponding areas of said substrate surface after said developing, said exposing being for a time period by which said primary image does result in the uncovering of corresponding areas of said substrate surface after said developing.

2. The method defined in claim 1 wherein said primary diffraction image is a Fresnel diffraction image.

3. The method defined in claim 2 wherein said varying said orientation comprises varying said oblique angle of said light.

4. The method defined in claim 2 wherein said varying said orientation comprises varying said rotational angle of said light.

5. The method defined in claim 4 wherein said rotational angle is varied by rotation of said photomask assembly about an axis orthogonal to said photomask.

6. The method defined in claim 5 wherein said photoresist covered surface is positioned with a spacing of from about 6 microns to about 180 microns from said photomask.

7. The method defined in claim 6 wherein said oblique angle is fixed at about 0.01 to about 0.001 radians during said varying of said rotational angle.

8. The method defined in claim 7 wherein said light has a coherence length of at least about 300 microns and a wavelength of about 400 nanometers to about 500 nanometers.

9. The method defined in claim 1 wherein said primary image is a diffraction self-image.

10. The method defined in claim 9 wherein said varying of said orientation comprises varying said oblique angle of said light.

11. The method defined in claim 9 wherein said varying of said orientation comprises varying said rotational angle of said light.

12. The method defined in claim 11 wherein said varying of said rotational angle is by rotation of said photomask assembly about an axis.

13. The method defined in claim 11 wherein said photoresist covered surface is positioned with a spacing of from about 6 microns to about 180 microns from said photomask.

14. The method defined in claim 13 wherein said oblique angle is fixed at about 0.01 to about 0.001 radians during said varying of said rotational angle.

15. The method defined in claim 14 wherein said light has a coherence length of at least about 300 microns and a wavelength of between about 400 nanometers to about 500 nanometers.

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Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print

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