首页 / 专利库 / 微电子学 / 电子束曝光 / Electron beam pattern generator

Electron beam pattern generator

阅读:762发布:2023-04-09

专利汇可以提供Electron beam pattern generator专利检索,专利查询,专利分析的服务。并且An electron beam pattern generator for the rapid and accurate generation of electron images upon a surface such as a surface coated with an electron sensitive resist material. The pattern generator is comprised of a field emission electron gun, the emission of which is focused and deflected by deflection coils controlled by a computer through digital to analog converters. Blanking of the beam is accomplished by deflection of the beam off range and onto the edge of an aperture plate. A stable high current beam is achieved by heating the field emission electrode. A properly biased device collects the secondary emission from the object on which the electron pattern is focused, and together with the deflection signals for the beam may be used to create a CRT display. A means for achieving step and repeat capability is also disclosed, as is a means for maintaining constant exposure dosage independent of beam current changes.,下面是Electron beam pattern generator专利的具体信息内容。

1. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; an electron emitting means for emitting electrons substantially as a result of field emission due to the presence of a strong electrostatic field; means for subjecting said emitting means to a strong electrostatic field to cause field emission therefrom and to accelerate said electrons generally in a beam and toward said target; means for focusing said beam onto said target; deflection means for accurately deflecting said beam within a controllable range in response to deflection control signals; blanking means for deflecting said beam beyond said controllable range and onto a beam intercepting member to prevent impingement of said beam on said target in response to an electrical blanking signal; and means for heating said emitting means substantially continuously, thereby improving long-term stability of said beam.
2. The apparatus of claim 1 wherein said focusing means is an electrostatic lens.
3. The apparatus of claim 2 wherein said deflection means and said blanking means are electromagnetic deflectioN means.
4. The apparatus of claim 1 further comprised of a secondary electron collecting and detecting means, said last named means being disposed adjacent the surface of said target and biased to accelerate secondary electrons emitted from said target to said last named means, and further being a means for providing an electrical signal output responsive to the number of secondary electrons collected.
5. The apparatus of claim 1 wherein said target support means is a means for moving said target in two generally orthogonal directions approximately perpendicular to said beam in response to control signals applied thereto.
6. The apparatus of claim 5 further comprised of position detecting means for accurately detecting the position of said target and providing output signals responsive to the error between said position of said target and the position indicated by said control signals applied to said target support means.
7. The apparatus of claim 6 further comprised of means for combining said output signals of said position detecting means with said control signals for said deflection means to provide control signals for said deflection means which are altered in accordance with said error.
8. The apparatus of claim 1 further comprised of a cathode ray tube and a secondary electron collecting and detecting means, said last named means being disposed adjacent the surface of said target and biased to accelerate secondary electrons emitted from said target to said last named means, and further being a means for providing an electrical signal output responsive to the number of secondary electrons collected, said cathode ray tube being coupled to said last named means and said control signals for each deflection means whereby said cathode ray tube may be caused to display an electron beam pattern being generated on said target.
9. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; electron emitting means for emitting electrons and directing said electrons in a beam toward said target; deflection means for deflecting said beam in response to deflection control signals; control means for providing deflection control signals to said deflection means; and sensing means for sensing the current of said beam impinging on said target, said sensing means being coupled to said control means and being operative to advance the position of said beam at a rate dependent upon said current of said beam.
10. The apparatus of claim 9 wherein said sensing means is a means including a photomultiplier tube for sensing secondary electrons emitted by said target.
11. The apparatus of claim 9 further comprised of a means for focusing said beam, said control means being coupled to said means for focusing to control the focus of said beam in cooperation with the control of said deflection control signals.
12. A method of controlling the exposure of a target in an electron beam pattern generator comprising the steps of: a. directing an electron beam toward the target b. sensing the current in the beam impinging on the target; and c. advancing the beam at a rate dependent upon the beam current.
13. The method of claim 12 wherein step (b) is accomplished by sensing the secondary electrons emitted by the target.
14. The method of claim 12 wherein said beam is advanced at a rate substantially proportional to beam current.
15. The method of claim 12 wherein step (c) comprises advancing the beam in a point to point manner at a rate dependent upon the beam current and focus and controlling the focus at each point.
16. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; an electron emitting means for emitting electrons substantially as a result of field emission due to the presence of a strong electrostatic field; means for subjecting said emitting means to a strong electrostatic field to cause field emiSsion therefrom and to accelerate said electrons generally in a beam and toward said target; means for focusing said beam onto said target; deflection means for accurately deflecting said beam within a controllable range in response to deflection control signals; blanking means for deflecting said beam beyond said controllable range and onto a beam intercepting member to prevent impingement of said beam on said target in response to an electrical blanking signal; sensing means for providing a signal responsive to the beam current impinging on said target; and control means coupled to said sensing means for advancing the beam position by control of said deflection means in response to said beam current impinging on said target.
17. The apparatus of claim 16, wherein said control means is a means for advancing the beam position at a rate substantially proportional to said beam current.
18. The apparatus of claim 17, wherein said sensing means includes a photomultiplier tube for collecting and sensing secondary electrons emitted from said target.
19. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; an electron emitting means for emitting electrons substantially as a result of field emission due to the presence of a strong electrostatic field; means for subjecting said emitting means to a strong electrostatic field to cause field emission therefrom and to accelerate said electrons generally in a beam and toward said target; means for focusing said beam onto said target; deflection means for accurately deflecting said beam within a controllable range in response to deflection control signals; blanking means for deflecting said beam beyond said controllable range and onto a beam intercepting member to prevent impingement of said beam on said target in response to an electrical blanking signal; sensing means for providing a signal responsive to the beam current impinging on said target, said sensing means including a photomultiplier tube for collecting and sensing secondary electrons emitted from said target; and control means coupled to said sensing means for advancing the beam position by control of said deflection means in a manner responsive to said beam current impinging on said target, said control means being a means for advancing the beam position at a rate substantially proportional to said beam current, and said control means including an oscillator means responsive to the output of said photomultiplier tube to provide an output frequency substantially proportional to said beam current.
20. The apparatus of claim 19, wherein said control means is further comprised of a storage means and a counter means, said storage means being coupled to said deflection means and being a means for storage of control information for the next desired beam position, said counter means being coupled to the output of said photomultiplier tube and said storage means and being a means for providing an advance signal to said storage means upon a resettable count, said storage means further being a means for presenting said control information to said deflection means and resetting said counter means upon the occurrence of said advance signal.
21. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; an electron emitting means for emitting electrons substantially as a result of field emission due to the presence of a strong electrostatic field; means for subjecting said emitting means to a strong electrostatic field to cause field emission therefrom and to accelerate said electrons generally in a beam and toward said target; means for focusing said beam onto said target; deflection means for accurately deflecting said beam within a controllable range in response to deflection control signals; and blanking means for deflecting said beam beyond said controllable range and onto a beam intercepting member to prevent impingement of said beam on said target in response to an electrical blanking signal, said blanking means including an aperture means for providing an aperture between said electron emitting means and said means for focusing, and a blanking control means adjacent said beam and between said electron emitting means and said aperture means, said blanking control means being a means for deflecting said beam away from the aperture defined by said aperture means by the control of the voltage on said blanking control means.
22. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; electron emitting means for emitting electrons and directing said electrons in a beam toward said target; deflection means for deflecting said beam in response to deflection control signals; control means for providing deflection control signals to said deflection means; and sensing means for sensing the current of said beam impinging on said target, said sensing means being coupled to said control means and being operative to advance the position of said beam at a rate dependent upon said current of said beam; and wherein said control means includes a storage means for storage in digital form of the coordinates for at least first and second successive beam positions, said storage means being responsive to an advance signal to advance its output from the coordinates of said first beam position to said second beam position, the output of said storage means being coupled to and controlling said deflection means, and said control means further including an oscillator means and a counter means, said oscillator means being coupled to said sensing means and said counter means, and being a means for providing a signal to said counter means which has a frequency dependent on the current in said beam, said counter means being coupled to said storage means and being a means for providing said advance signal upon the occurrence of a preset count.
23. In an electron beam pattern generator, the apparatus comprising: means for supporting a target; electron emitting means for emitting electrons and directing said electrons in a beam toward said target; deflection means for deflecting said beam in response to deflection control signals; control means for providing deflection control signals to said deflection means; sensing means for sensing the current of said beam impinging on said target, said sensing means being coupled to said control means and being operative to advance the position of said beam at a rate dependent upon said current of said beam; means for focusing said beam, said control means being coupled to said means for focusing to control the focus of said beam in cooperation with the control of said deflection control signals; aperture means for defining an aperture between said electron emitting means and said means for focusing; and blanking means disposed adjacent to said beam between said electron emitting means and said aperture means, said blanking means being responsive to a blanking signal to deflect said beam away from said aperture means.
说明书全文
高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。

申请试用

QQ群二维码
意见反馈