Growth of ternary compounds utilizing solid, liquid and vapor phases专利检索-气相外延微电子学专利检索查询-专利查询网

Growth of ternary compounds utilizing solid, liquid and vapor phases

阅读：892发布：2023-06-27

专利汇可以提供Growth of ternary compounds utilizing solid, liquid and vapor phases专利检索，专利查询，专利分析的服务。并且This disclosure provides a process for obtaining a ternary compound with a particular composition or with continuous range of compositions utilizing steps of a chemical vapor deposition procedure which cannot normally be obtained directly by chemical vapor deposition itself. Through the chemical vapor deposition procedure, a first layer of GaP is deposited epitaxially onto a crystalline substrate; thereafter a layer of InP is deposited on the first GaP layer; and finally another GaP layer is deposited on the InP layer. The layers have especially good metallurgical contact with each other and are essentially free of imperfections at the interfaces. In accordance with the solid-liquid-solid procedure of the prior art, the sandwich structure obtained via the noted chemical vapor deposition procedure is established at a given temperature above the melting point of the InP layer but below the melting point of the GaP layers and equilibrium of the ensemble is established thereat. Thereafter, the temperature of one of the interfaces between the GaP layers and the InP liquid zone is cooled and the resultant GaxIn1 xP layer growth is initiated. Conveniently, a temperature gradient is imposed on the sandwhich structure ensemble and the growth of the GaxIn1 xP layer continues until the GaP layer at the higher temperature is consumed, or the growth thereof is otherwise terminated.，下面是Growth of ternary compounds utilizing solid, liquid and vapor phases专利的具体信息内容。

权利要求

2. Method as set forth in claim 1 wherein said group of selected arsenides, phosphides and antimonides comprises: GaxIn1 xP, GaxIn1 xAs, GaxIn1 xSb, InxAl1 xP, InxAl1 xAs, and InxAl1 xSb.

3. Method of growing a region of a multicomponent compound of the mixed crystal system GaxIn1 xP comprising the steps of: growing a sandwich structure at a given location having first, second, and third solid thin film layers, said first layer being of one component GaP of said mixed crystal system, said second layer being of another component InP of said mixed crystal system, said third layer being of said one component GaP of said mixed crystal system, said second layer being intermediate to said first and third layers, and having lower melting point; said growing of said sandwich structure including the steps of establishing a crystalline substrate in a first given temperature region, establishing first Ga and second In source materials in another given temperature region; establishing first H2 and second PCl3 gas sources respectively for obtaining respective volatile compounds of said corresponding source materials by first and second chemical reactions therewith, transporting said volatile compound of said first source material to the surface of said substrate where said source material is deposited thereat by third chemical reaction, establishing a vapor of another component of said first layer to be grown at the substrate, whereby said first layer is grown at said substrate by fourth chemical reaction between said first source material thereat and said vapor, transporting said other volatile compound of said second source material to said first grown layer and growing thereat said second layer by fifth chemical reaction between said second source material deposited at said first layer by sixth chemical reaction from said second volatile compound and said vapor, and growing said third layer thereof of said sandwich structure by seventh chemical reaction between said vapor and said first source material obtained by eighth chemical reaction of said first volatile compound at said second layer; and growing a region of said multicomponent compound from said sandwich structure by solid-liquid-solid procedure including the steps of establishing a substantially equilibrium condition of said sandwich structure at a temperature above the melting point of said intermediate layer and below the melting point of said second and third layers to obtain a liquid zone with a given composition with first and second liquid-solid-interfaces at said second and third layers, lowering the temperature at one said solid-liquid interface between said intermediate liquid zone and one said adjacent solid layer, and growing said crystalline region at said latter liquid-solid interface.

4. A method as set forth in claim 3 wherein said third and fifth chemical reactions are disproportionation reactions.

5. Method for growing a region of the multicomponent compound of a mixed crystal system with more than two components AlP1 xAs x, comprising the steps of: growing a sandwich structure by chemical vapor deposition procedure including the steps of establishing a crystalline substrate for growth of a sandwich structure at a given location, establishing appropriate material sources and gas sources for growing a plurality of layers of constituent components of said multicomponent compound by chemical reactions at said given location in a reaction chamber, whereby said sandwich structure is established at said given location having first, second, and third solid thin film layers, said first and third layers being of one component of said mixed crystal system, said second layer being of another component of said mixed crystal system, said second layer being intermediate to said first and third layers, and having lower melting point; and growing a region of said multicomponent compound by solid-liquid-solid crystal growth procedure including the steps of establishing a substantially equilibrium condition of said sandwich structure at a temperature above the melting point of said intermediate layer and below the melting point of said first and third layers to obtain a liquid zone with a given composition with first and second liquid-solid-interfaces in said second and third layers, lowering the temperature at one said solid-liquid interface between said intermediate liquid zone and one said adjacent solid layer, and growing said crystalline region at said latter liquid-solid interface.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置	2021-02-10	1
一种部分绝缘层上硅材料结构及制备方法	2021-11-06	0
单晶压电射频谐振器和滤波器的制备方法	2020-07-17	4
一种碳化硅同质PIN微结构材料及其制作方法	2021-07-20	2
一种III-V族半导体单晶衬底孔洞消除之后的表面结构及其制备方法	2020-11-20	2
Mode locking semiconductor laser and optical communication	2022-04-03	2
Method of manufacturing reverse blocking insulated-gate bipolar transistor	2021-11-24	0
CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME	2021-05-27	2
무촉매 기판 성장 그래핀의 제조방법 및 무촉매 기판 성장 그래핀	2020-10-10	2
VERFAHREN ZUR HERSTELLUNG VON TRIALKYLGALLIUM-VERBINDUNGEN UND DEREN VERWENDUNG	2020-11-19	4

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

气相外延热门专利

热门分类

Growth of ternary compounds utilizing solid, liquid and vapor phases

该功能需要专业版企业版VIP权限，您可以：