Method of purifying a quartz processing vessel for use in the production of semiconductors专利检索-气相外延微电子学专利检索查询-专利查询网

Method of purifying a quartz processing vessel for use in the production of semiconductors

阅读：472发布：2023-06-26

专利汇可以提供Method of purifying a quartz processing vessel for use in the production of semiconductors专利检索，专利查询，专利分析的服务。并且Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase. According to the invention, the entire inside surface of the processing vessel is provided with a highly pure silicon layer by precipitation from the gaseous phase. The silicon layer and its quartz base are thereafter tempered at a temperature of at least 1,000* C. The silicon layer is then selectively removed from its quartz base and the processing vessel is then ready for use as intended.，下面是Method of purifying a quartz processing vessel for use in the production of semiconductors专利的具体信息内容。

权利要求

2. The method of claim 1, wherein the thickness of the precipitated silicon layer is from 10 to 100 Mu .

3. The method of claim 1, wherein the silicon layer and quartz vessel are tempered at least for 1 hour.

4. The method of claim 3, wherein the silicon layer and quartz vessel are tempered for from 3 to 10 hours.

5. The method of claim 1, wherein following the completion of the tempering step, the silicon layer is removed by etching in the gaseous phase.

6. The method of claim 1, wherein following the completion of the tempering step, the silicon layer is removed by etching with gaseous HCl at a temperature of 1,200* C.

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Method of purifying a quartz processing vessel for use in the production of semiconductors

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