Method of controlled doping in an epitaxial vapor deposition process using a diluentgas
阅读：449发布：2023-07-04
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1. THE PROCESS OF DEPOSITING A MONOCRYSTALLINE SEMICONDUCTOR FILM FROM A GAS STREAM AND OF DOPING THE FILM BY CONTROLLED ADDITION TO THE GAS STREAM OF AN IMPURITY COMPOUND WHICH IS WHOLLY GASEOUS AT NORMAL ROOM TEMPERATURE, SAID PROCESS INCLUDING THE STEPS OF: PASSING OVER A CRYSTAL ELEMENT OF THE SEMICONDUCTOR MATERIAL A MAIN STREAM OF CARRIER GAS, INJECTING INTO SAID MAIN GAS STREAM A GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL FROM WHICH SEMICONDUCTOR MATERIAL DEPOSITS ON SAID CRYSTAL ELEMENT AT A TEMPERATURE ABOVE 600*C., WITHDRAWING A MIXTURE OF A DILUENT GAS AND A NORMALLY GASEOUS HYDRIDE COMPOUND OF A DOPING IMPURITY FROM A SOURCE CONTAINER IN WHICH SAID HYDRIDE COMPOUND IS WHOLLY GASEOUS AND IS DILUTED BY SAID DILUENT GAS TO A PREDETERMINED LOW CONCENTRATION,
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