Ion implanting apparatus
专利汇可以提供Ion implanting apparatus专利检索，专利查询，专利分析的服务。并且PURPOSE: To make it possible to cause the implanted quantities of ions into scanned target wafers in one batch to differ from each other, by using such a rotary disk that the angle between the direction of proceeding of a fixed ion beam and each of the wafers can be optionally set.
CONSTITUTION: A heavy-electrical-current ion implanter of the batch processing type is constructed so that a fixed ion beam 5 is generated by an ion source 1, an extraction electrode means 2, a mass spectrometer means 3 and an acceleration means 4 and irradiated upon scanned target wafers 6. A rotary disk 21, on which the wafers 6 are mounted, is built so that the angles between the fixed ion beam 5 and the wafers can be optionally set at θ
1 Wθ
4 or he like. The implanted quantities of ions into the wafers 6 in one batch canthus be optionally made different from each other. As a result, even production work in many kinds and small quantities can be performed without reducing the efficiency thereof.
COPYRIGHT: (C)1987,JPO&Japio，下面是Ion implanting apparatus专利的具体信息内容。
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