Ion implantation device
专利汇可以提供Ion implantation device专利检索，专利查询，专利分析的服务。并且PURPOSE: To enhance productivity, by housing an ion implanter and a laser oscillator provided with a scanning mirror, a reflected light convergence lens, etc., in a vacuum container to continuously perform ion implantation and annealing.
CONSTITUTION: A semiconductor substrate W can be put into and out of a vacuum container 1 provided with an exhaust system 2. An ion implanter 3, in which an accelerator, a convergence lens, a scanner, etc. are disposed in front of a liquefied metal ion source, is provided in the vacuum container 1. A laser annealer, which comprises a laser oscillator 6 connected to a laser power supply 7, a mirror 8, which is located in front of the laser oscillator 6 and moved by a driver 10 to perform scanning in the directions of an X-axis and a Y-axis, and a lens 9 for converging a reflected beam, is housed in the vacuum container 1. Control is performed by a computer 5 so that ions are implanted into the substrate W and it is subsequently annealed. As a result, productivity is enhanced and the quality of a product is prevented from being deteriorated due to the mixing of an impurity.
COPYRIGHT: (C)1987,JPO&Japio，下面是Ion implantation device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种离子注入机用高性能低温泵 | 2020-05-08 | 359 |
| 一种基于离子束辐照提高钙钛矿量子点稳定性的方法 | 2020-05-12 | 280 |
| 二维电子气沟道半耗尽型霍尔传感器及其制作方法 | 2020-05-12 | 787 |
| 离子注入机台中离子源头的结构 | 2020-05-08 | 1005 |
| 用于巨型光转换的全硅光电转换器的生产工艺 | 2020-05-08 | 458 |
| 一种无气泡坑超高质量SOI基Ge薄膜异质键合方法 | 2020-05-11 | 644 |
| 真空腔污染颗粒的清除装置和方法 | 2020-05-13 | 97 |
| 离子注入方法及离子注入机 | 2020-05-11 | 823 |
| 使用基板级离子注入制造太阳能电池发射极区 | 2020-05-11 | 678 |
| 一种多阴极长寿命型离子源 | 2020-05-13 | 991 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
