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Charge neutralizing apparatus for ion implanter

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专利汇可以提供Charge neutralizing apparatus for ion implanter专利检索,专利查询,专利分析的服务。并且PURPOSE: To prevent any damage to a wafer due to a radiated ion beam from occurring, by drawing an electron with relatively higher voltage than an electron drawing system, decelerating it to less than the specified energy by an electron decelerating system, and emitting the decelerated one into an ion current to be neutralized.
CONSTITUTION: A charge neutralizing apparatus 1 is installed between an accelerating stage of an accelerating ion ION of an ion implanter and a wafer 2 performing ion implantation. And, this neutralizing apparatus 1 is made up of an electron drawing system inclusive of an electron source 11 and a drawing electrode 12, and an electron decelerating system 14 consisting of a Faraday cup 16 and a decelerating power source 15. And, an electron is drawn with relatively higher voltage than the electron drawing system, and size of an electron current is kept intact but its energy is set down to less than the specified value, then it is emitted into the ion ION to be neutralized by the electron decelerating system 14. Therefore, with a simple structure, any damage to the wafer 2 due to the high energy electron is eliminated, preventing the charge from occurring, thus high-quality ion implantation is performable.
COPYRIGHT: (C)1987,JPO&Japio,下面是Charge neutralizing apparatus for ion implanter专利的具体信息内容。

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