Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To contrive the improvement in safety and in operating efficiency of an ion implanter by a method wherein an LLD structure is formed by twice of phosphorus ion implantation. CONSTITUTION:A gate oxide film 2 and a field oxide film 3 are formed on a P type Si substrate 1 by thermal oxidation. After a polycrystalline Si film is formed on these films 2 and 3, a gate electrode 4 is formed by etching the polycrystalline film. The region unmasked with the gate electrode 4 is removed by etching. Next, an N type impurity of phosphorus is diffused into the Si substrate 1 by using the gate electrode 4 and the field oxide film 3 as a mask, resulting in the formation of source and drain regions 10. An insulation film 6 such as an oxide film is formed. Then, an insulation film 7 is left on the side wall of the gate electrode 4 by etching the insulation film 6 by anisotropic plasma etching, and the insulation film on a diffused layer 10 is removed. A relatively deep diffused layer 11 is formed by implanting phosphorus directly into the Si substrate by using the gate electrode 4 and the insulation film 7 as a mask. Finally, an intermediate insulation film 9 is formed by lamination.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种自旋半导体ZrO2薄膜的制备方法 | 2020-05-11 | 76 |
| 使用基板级离子注入制造太阳能电池发射极区 | 2020-05-14 | 918 |
| 一种耐高温高质量SOI基剥离Ge薄膜的制备方法 | 2020-05-11 | 764 |
| 基于深层离子注入的氧化镓肖特基二极管抗位移辐照方法 | 2020-05-13 | 630 |
| 一种半导体芯片生产工艺 | 2020-05-13 | 980 |
| 离子注入方法及离子注入机 | 2020-05-11 | 823 |
| 增强型的Ga2O3金属氧化物半导体场效应晶体管及制作方法 | 2020-05-11 | 248 |
| 提高等离子体离子注入机机台产能的方法及设备 | 2020-05-12 | 414 |
| 一种高量子效率CCD结构 | 2020-05-12 | 623 |
| 一种多阴极长寿命型离子源 | 2020-05-13 | 991 |
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