Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve safety and the operating efficiency of an ion implantation machine by implanting impurity ions while using a gate electrode as a mask to form source and drain regions and implanting the same impurity ions while employing the gate electrode and an insulating film shaped to the side wall of the gate electrode as masks. CONSTITUTION:A gate oxide film 2 and a field oxide film 3 are formed on a P type silicon substrate 1 through thermal oxidation. A polycrystalline silicon film is shaped on these oxide films, and a gate electrode 4 is formed through etching. An N type impurity is diffused into the silicon substrate 1 while employing the gate electrode 4 and the field oxide film 3 as masks through an ion implantation method to form source and drain regions 10. An insulating film 6 is shaped and the insulating film 7 is left on the side wall of the gate electrode 4 through etching, and the insulating film on the diffusion layer 10 is removed. Phosphorus is driven directly into the silicon substrate 1 while using the field insulating film 3, the gate electrode 4 and the insulating film 7 as masks to form comparatively deep diffusion layers 11. An intermediate insulating film 9 is laminated and shaped.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种自旋半导体ZrO2薄膜的制备方法 | 2020-05-11 | 76 |
| 使用基板级离子注入制造太阳能电池发射极区 | 2020-05-14 | 918 |
| 一种耐高温高质量SOI基剥离Ge薄膜的制备方法 | 2020-05-11 | 764 |
| 基于深层离子注入的氧化镓肖特基二极管抗位移辐照方法 | 2020-05-13 | 630 |
| 一种半导体芯片生产工艺 | 2020-05-13 | 980 |
| 离子注入方法及离子注入机 | 2020-05-11 | 823 |
| 增强型的Ga2O3金属氧化物半导体场效应晶体管及制作方法 | 2020-05-11 | 248 |
| 提高等离子体离子注入机机台产能的方法及设备 | 2020-05-12 | 414 |
| 一种高量子效率CCD结构 | 2020-05-12 | 623 |
| 一种多阴极长寿命型离子源 | 2020-05-13 | 991 |
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