Apparatus for and preparation of silicon carbide single crystals
阅读：76发布：2022-06-24
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1. A FURNACE FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE COMPRISING A VESSEL, AN EMPTY HOLLOW GRAPHITE CYLINDER WITH CLOSED ENDS HAVING POROUS WALLS DISPOSED WITHIN SAID VESSEL, THE VESSEL CONSTRUCTED TO CONTAIN AT LEAST ONE MATERIAL OF THE GROUP CONSISTING OF SILICON CARBIDE AND A MIXTURE INCLUDING SILICON AND CARBON, THE SAID MATERIAL SURROUNDING SAID GRAPHITE CYLINDER, SILICON MEMBERS DISPOSED AT PRESELECTED AREAS ALONG THE INSIDE SURFACE OF THE WALLS OF SAID CYLINDER TO FORM PREFERRED NUCLEATION SITES FOR CRYSTALS OF SILICON CARBIDE, AND HEATING MEANS DISPOSED ABOUT SAID VESSEL TO HEAT IT AND THE CONTAINED MATERIAL TO A TEMPERATURE SUFFICIENT TO CAUSE EVOLUTION OF SILICON CARBIDE VAPORS, FROM THE SAID MATERIAL AND PASSAGE THEREOF THROUGH THE POROUS WALLS OF THE GRAPHITE CYLINDER WHERE BY THE VAPORS OF SILICON CARBIDE CAN CONCENTRATE AT THE SELECTED AREAS OF THE GRAPHITE CYLINDER INTO THE HOLLOW THEREOF.
2. A METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS WHICH COMPRISES RAPIDLY HEATING TO THE SUBIMATION TEMPERATURE OF SILICON CARBIDE A MASS OF A MATERIAL SELECTED FROM AT LEAST ONE OF THE GROUP CONSISTING OF SILICON CARBIDE AND A MIXTURE OF SILICON AND CARBON, THERE BEING A BRIEF TEMPERATURE DWELL AT ABOUT 1400* C. WHEN THE SILICON AND CARBON MIXTURE IS EMPLOYED, CONTINUING THE HEATING UNTIL A TEMPERATURE OF ABOUT 1800* C. IS REACHED AND DEGASSING THE MASS AT SUCH LAST TEMPERATURE THEREAFTER HEATING THE MASS TO A TEMPERATURE OF FROM ABOUT 2000* C. TO ABOUT 2500* C. WHEREBY VAPORS OF SILICON CARBIDE ARE PRODUCED, THE SAID MATERIAL SURROUNDING AN EMPTY HOLLOW GRAPHITE CYLINDER THAT IS PERVIOUS TO SILICON CARBIDE VAPOR, DIFFUSING SAID VAPOR INTO THE HOLLOW OF SAID GRAPHITE CYLINDER, MAINTAINING THE INSIDE WALL SURFACE OF SAID CYLINDER AT A TEMPERATURE BELOW THE TEMPERATURE IN SAID HEATED MASS, WHEREBY A SUPERSATURATED VAPOR OF SILICON CARBIDE IS PRODUCED AT SAID SURFACE AND A RELATIVELY SMALL NUMBER OF SINGLE CRYSTALS OF SILICON CARBIDE ARE NUCLEATED THEREON, THEN REDUCING THE TEMPERATURE OF SAID MASS OF SILICON AND CARBON WHEREBY THE DEGREE OF SUPERSATURATION OF THE VAPOR DIFFUSED INTO SAID CAVITY AT SAID SURFACE IS LOWER BELOW THE NUCLEATION PRESSURE AND SAID NUCLEATED CRYSTALS GROW, AND RECOVERNG THE RESULTING RELATIVELY LARGE CRYSTALS.
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