Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To make it possible to vary energy band continuously, by providing a non-single crystal semiconductor containing an additive capable of varying energy band, on a non-single crystal semiconductor having one conducting type.
CONSTITUTION: Amorphous or polycrystalline non-single crystal film is formed on a semiconductor or insulator by using a material which becomes a semiconductor, such as silicon, silane, dichlorosilane, and other silified gas. Next, on top of this is formed a non-sigle crystal film consisting of silicon to which hydrogen, heavy hydrogen, or a hologen compound such as of chlorine. These substances bond with the unpaired bonding hands of silicon and suppress the occurrence of re-bonding center and perform neutralization electrically. Further, carbon, nitrogen and oxygen are equally dispersed and added to the semiconductor. As a result, there is no specific boundary level, and the energy band assumes continuity or smooth discontinuity. For semiconductor material, germanium, silicon carbide, or compound semiconductor, besides silicon, may be used.
COPYRIGHT: (C)1980,JPO&Japio，下面是Semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 图形化单晶薄膜制备方法、图形化单晶薄膜及谐振器 | 2020-05-12 | 464 |
| 碳化硅单晶的制备装置及其应用 | 2020-05-13 | 557 |
| 一种有效降低碳化硅单晶缺陷的生长方法和高质量碳化硅单晶 | 2020-05-11 | 858 |
| 用于物理气相传输法生长碳化硅晶体的坩埚 | 2020-05-13 | 175 |
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