Electric power source circuit for complementary metal oxide film semiconductor integrated circuit
专利汇可以提供Electric power source circuit for complementary metal oxide film semiconductor integrated circuit专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent generation of malfunctions for lowering of electric power of a memory circuit dependent upon NAND and NOR gates, resistances, capacitors, and so on which constitute an integrated circuit, by controlling a transistor for power source line bypass by electric discharge according to a time constant. CONSTITUTION:When a DC voltage is applied to input power source terminals V2 and E2, the power source voltage is supplied to power source terminals V1 and E1 of a memory circuit, which is formed by NAND gates G1 and G2, resistance R1, capacitor C1, and so on constituting a complementary metal oxide film semiconductor integrated circuit, through diode D7, and capacitor C2 of the power source circuit is charged through diode D8. Then, when the cathode potential of diode D8 becomes equal to the emitter potential of transistor Q1 of the power source circuit bypass, transistor Q1 becomes nonconductive. When the DC power source voltage is lowered temporarily, the transistor is nonconductive still during a prescribed time by the capacity of capacitor C2 according to a prescribed time constant, so that generation of malfunctions dependent upon electric discharge of set and reset storing capacitor C1 and so on for temporary lowering of the power source voltage can be prevented.，下面是Electric power source circuit for complementary metal oxide film semiconductor integrated circuit专利的具体信息内容。
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