Reactive sputtering apparatus and cathode elements therefor专利检索-电击穿绝缘专利检索查询-专利查询网

Reactive sputtering apparatus and cathode elements therefor

阅读：619发布：2021-08-30

专利汇可以提供Reactive sputtering apparatus and cathode elements therefor专利检索，专利查询，专利分析的服务。并且A reactive sputtering apparatus is disclosed having metal cathode units, each of which comprises a cathode element and an electrostatic shield spaced from and surrounding it on all sides except that which is to be presented towards a substrate on to which a coating of a compound of the cathode metal is to be sputtered, the electrostatic shield being formed with spaced inner and outer walls between which the sputtering atmosphere can be fed into the working space between the cathode element and the substrate. The functions of electrostatic shielding and gas supply are thereby separated from one another, so that the spacings of the inner wall from the cathode element, and of the inner wall from the outer wall, can be dimensioned to suit the different functions, and the risk of electrical breakdown can be much reduced.，下面是Reactive sputtering apparatus and cathode elements therefor专利的具体信息内容。

权利要求

1. Apparatus for depositing a transparent, electrically conducting film of a metallic compound on to the surface of a substrate by reactive sputtering, comprising a vacuum chamber, means for supporting the substrate in the vacuum chamber, a cathode unit including a metal cathode element arranged in the vacuum chambEr so as to present towards the substrate a surface substantially parallel to the substrate surface and an electrostatic shield inside said chamber which is spaced from and surrounds the cathode element on all sides except that of the surface presented towards the substrate, means for connecting the cathode element to a source of high negative potential, and means for supplying a sputtering atmosphere of a reactive gas and another gas or gases at reduced pressure through the electrostatic shield into the working space between the cathode element and the substrate, wherein the electrostatic shield is formed with spaced inner and outer walls between which, in use, the sputtering atmosphere is fed into the working space.

2. Apparatus according to claim 1, wherein the cathode unit is of elongated shape, and wherein baffles are disposed within the interspace between the inner and outer walls for enhancing uniformity of flow rates of the sputtering atmosphere along the length of the cathode unit.

3. Apparatus according to claim 2, wherein a pair of inlet pipes for the sputtering atmosphere are secured to the outer wall at positions on the centre line of the cathode unit but spaced from one another along the length of the cathode unit and opening into the interspace between the inner and outer walls, two baffles being disposed parallel to one another and to the length of the cathode unit, one on each side of the said centre line, to restrict passage of the sputtering atmosphere laterally from the inlet pipes.

4. Apparatus according to claim 3, wherein the baffles are each in the form of a plate-like member secured at right angles to the adjacent part of the outer wall and having a height which varies along the length of the baffle, being greatest in regions nearest to the inlet pipes.

5. Apparatus according to claim 1, wherein the cathode element is of elongated form and the electrostatic shield comprises an inner trough-shaped side and bottom wall spaced from and surrounding bottom and side surfaces of the cathode element, an outer trough-shaped side and bottom wall spaced from said inner wall, and single end walls spaced from the ends of the cathode element, which close off the ends of both trough-shaped walls.

6. Apparatus according to claim 1, comprising a plurality of said cathode units of elongated shape, together forming a cathode assembly which can be traversed parallel to the substrate surface and perpendicular to the length of the cathode units during the sputtering operation.

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