专利汇可以提供Semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To arrest a dielectric breakdown of a rising part at a position where a wiring is piled by a method wherein an Si layer, the lower layer is made an amorphous Si layer in the semiconductor device provided with electrode wirings in Si 2-layer structure. CONSTITUTION:The electrode wirings in the 2-layer structure are formed as follows on a single crystalline Si substrate 2 on which an element region is formed. That is, a gate oxidized film 4 is cover-attached on the substrate 2, and the lower layer wiring 6 is formed on the oxidized film 4 using the amorphous Si. Then, a heat- treatment is applied to oxidize the surface of the wiring 6 and to cause an interlayer insulating oxide film 8, and those layered body is etched to form a prescribed pattern. Thereafter, a gate oxidized film 10 is newly cover-attached on the substrate 2 exposed while being extended as a film 12 on the pattern 12 also, and the upper layer wiring 14 composed of a polycrystalline Si is formed on the whole surface. In such a manner, the dielectric breakdown is not given rise at the rising part where the upper wiring 14 faces to the lower wiring 6 through the film 12 and accordingly, the device is improved in reliability.,下面是Semiconductor device专利的具体信息内容。
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