Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To reduce leakage current of a transistor in the boundary region of a BOX isolation part and at a gate electrode part, by protecting an Si substrate which has suffered damage to the side of trench at the time of trench formation by the side wall of a thick Si
3 N
4 film even if over-etching is performed.
CONSTITUTION: After an SiO
2 film 1 is formed on a substrate 2 and a part of the SiO
2 film 1 at which a BOX isolation part is formed is removed, a shallow trench 3 is formed on a substrate 2. After a P-layer 5 for a channel stopper is formed, a side wall 4 of a Si
3 N
4 film is formed and a BOX isolation trench 6 is formed in the substrate 2. After the P-layer 7 for the channel stopper is formed, the trench is buried with the SiO
2 film and flattening is performed. The P-layer 9 for controlling threshold voltage of the transistor is formed. Thereafter, an n-layer for a source 12 and a drain 13 is formed. Consequently, the leakage current of a transistor in the boundary region of the BOX isolation part and at a gate electrode part can be reduced.
COPYRIGHT: (C)1989,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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