Semiconductor laser manufacturing method
专利汇可以提供Semiconductor laser manufacturing method专利检索，专利查询，专利分析的服务。并且PURPOSE:To lower the threshold current of laser oscillation, by making an active layer thin by using the molecular beam epitaxial method, and at the same time, by producing laser oscillation by injecting a carrier through a PN homojunction. CONSTITUTION:By the molecular beam epitaxial method, a molecular beam grown wafer is formed, consisting of N-type AlGaAs layer 10 and 12 which are to become light-sealing layers, N-type GaAs layer 11, which is to become an active layer, and N-type GaAs layer 13, which is to become an ohmic contact layer. Next, by diffusing P-type dopant so that it expands from the surface of the left half of layer 13 to the major part of base 1a, PN GaAs homojunction 19 is formed on the junction of layer 11 and P-type GaAs layer 16. At the same time, PN AlGaAs homojunctions 20 and 21 are formed respectively on the junction of layer 10 and P-type AlGaAs layer 15 and the junction of layer 12 and P-type AlGaAs layer 17. Then, layer 13 and layer 18 are separated, and an electrode is formed for each.，下面是Semiconductor laser manufacturing method专利的具体信息内容。
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