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Bias circuit of field effect transistor

阅读:826发布:2021-10-27

专利汇可以提供Bias circuit of field effect transistor专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a bias circuit for the field effect transistor which features such triode characteristics that the DC bias drain current never change even with fluctuation of the active power voltage. CONSTITUTION:Fixed bias circuit 12 consists of bias circuit 12a and 12b which are symmetric to each other for pure complementary AB-class push-pull source follower type amplifier circuit 13 which uses field effect transistor Fa and Fb featuring the N- and P-channel type triode characteristics. With circuit 12, the signals given from output terminal t2 of amplifier circuit 11 are supplied in the same phase to each gate of Fa and Fb. In bias circuit 12a, output terminal t2 of circuit 11 of the driving step is connected to the anode of Zener diode D22, and the cathode is connected to the gate of Fb via resistance R4a as well as to power source +B2 via resistance R3a.,下面是Bias circuit of field effect transistor专利的具体信息内容。

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