专利汇可以提供Multiple color light emitting element专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain the element with specified characteristic by a method wherein the processes causing defective crystalization such as selective growth grocess, diffusion process and the like are eliminated. CONSTITUTION:The first layer 2 comprising N type GaP and the second layer 3 comprising P type GaP are successively laminated by epitaxial growth on N type GaP substrate 1. The first layer 2 and the second layer 3 respectively contain S and Zn as their dopant both containing N. The boundary between the first and second layers becomes the green color light emitting junction 5. Besides, the third layer 6 comprising N type GaP containing Te as impurity is formed. Next the fourth layer 8 comprising P type GaP is formed. The fourth layer 8 contains ZnO as the impurity while the boundary between the third layer 6 and the fourth layer 8 becomes a red color light junction 9. Finally the fourth layer 8 is separated by the grooves 10 forming the first electrodes 11a, 11b on the surface of the fourth layer 8 and the second electrode 12 on the backside of the substrate 1.,下面是Multiple color light emitting element专利的具体信息内容。
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