Impatt diode testing专利检索-雪崩二极管二极管电子零件及设备专利检索查询-专利查询网

Impatt diode testing

阅读：664发布：2022-09-17

专利汇可以提供Impatt diode testing专利检索，专利查询，专利分析的服务。并且A pulse technique and network are described for measuring the reverse leakage current of an operating IMPATT diode. Observation under substantially operating conditions is attained by pulsing the diode under test out of the avalanche condition very briefly and observing the reverse leakage current. High reverse leakage currents under these conditions indicate likelihood of ''''short out'''' failure.，下面是Impatt diode testing专利的具体信息内容。

权利要求

1. A method for evaluating the likelihood of catastrophic failure of an IMPATT diode comprising: 1. operating said diode in the avalanche condition; 2. then, applying to said diode a voltage pulse of a magnitude and polarity sufficient to withdraw the diode from the avalanche condition but without going into forward bias, for a short period of time; and 3. observing the leakage current through said diode during said short period of time.

2. then, applying to said diode a voltage pulse of a magnitude and polarity sufficient to withdraw the diode from the avalanche condition but without going into forward bias, for a short period of time; and

2. A method for evaluating the likelihood of catastrophic failure of an IMPATT diode comprising:

2. then, applying to said diode a voltage pulse of a magnitude and polarity Sufficient to withdraw the diode from the avalanche condition for a period of from about 1 to 10 microseconds, but without going into forward bias; and observing the leakage current through said diode during the application of said voltage pulse.

3. The method in accordance with claim 2 in which said voltage pulse has a magnitude of from about 25 to 50 volts and a duration of about 5 or 6 microseconds.

3. observing the leakage current through said diode during said short period of time.

4. Apparatus for evaluating the likelihood of catastrophic failure of an IMPATT diode comprising first voltage means for biasing said diode in the avalanche condition, second voltage means for applying to said diode a voltage pulse to withdraw the diode from the avalanche condition for a short period of time, but without going into forward bias, and third means for observing the leakage current through said diode during said short period of time.

5. Apparatus in accordance with claim 4 in which said third means includes a resistive element in parallel connection with an oscilloscope.

6. Apparatus in accordance with claim 5 including diode means and voltage means connected so as to bypass avalanche operating current of said first voltage means around said resistive element.

7. Apparatus in accordance with claim 6 including diode means connected so as to withdraw stored charged rapidly from the IMPATT diode under test.

说明书全文

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Impatt diode testing

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