Semiconductor surface barrier diode of schottky type and method of making same
阅读：75发布：2023-11-13
专利汇可以提供Semiconductor surface barrier diode of schottky type and method of making same专利检索，专利查询，专利分析的服务。并且A semiconductor surface barrier diode of Schottky type comprising a contact of semiconductor and metal or a compound of the metal and the semiconductor, wherein the contact surface forming a barrier is formed remarkably uneven so as to adjust the barrier height.，下面是Semiconductor surface barrier diode of schottky type and method of making same专利的具体信息内容。
2. The semiconductor surface barrier diode of Schottky type according to claim 1, wherein the degree of unevenness is larger than 100 A. but smaller than a few microns.
3. The semiconductor surface barrier diode of Schottky type according to claim 1, wherein said semiconductor is selected from the group consisting of Si, Ge, GaAs, InP and GaP.
4. The semiconductor surface barrier diode of Schottky type according to claim 1, wherein said material is selected from the group of Ti, Cr, W, Mo, Ag, Au, Pt and silicides thereof and said semiconductor is silicon.
5. A method of controlling the barrier height in the manufacture of a semiconductor surface barrier diode of Schottky type comprising the steps of preparinG a semiconductor substrate having at least one flat plane surface, depositing a metal capable of inducing a surface barrier in the semiconductor substrate on the plane surface of the semiconductor substrate, and heating the assembly at a predetermined temperature above the characteristic temperature so that the deposited metal reacts with the semiconductor to form a compound and that the compound forms an uneven contact surface with the semiconductor substrate.
6. A method according to claim 5, wherein said deposition step is effected by heating the semiconductor substrate in an atmosphere including a halide of said metal at a temperature at which said metal halide is thermally decomposed.
7. A method according to claim 6, wherein said semiconductor is silicon.
8. A method according to claim 6 further comprising the step of again heating the assembly at the same temperature as that of the preceding heating step for a selected period to readjust the barrier height at the contact portion.
9. A method of making a semiconductor surface barrier diode of Schottky type according to claim 7, wherein said metal halide is one selected from the group consisting of WF6 and MoF6.
10. A method of making a semiconductor surface barrier diode of Schottky type according to claim 7, wherein the temperature of the thermal decomposition is about 400* C.
11. A method of making a semiconductor surface barrier diode of Schottky type according to claim 7, wherein said metal halide is WF6 and the temperature of the heating step for causing reaction is above 1,000* C. but below 1,250* C.
12. A method of making a semiconductor surface barrier diode of Schottky type according to claim 7, wherein said metal halide is MoF6 and the temperature of heating for causing reaction is above 900* C. but below the melting point of silicon.
13. A method of making a semiconductor surface barrier diode of Schottky type comprising the steps of: preparing a semiconductor substrate having a flat surface; and heating the semiconductor substrate in an atmosphere comprising a gas mixture of hydrogen and a halide of a metal capable of forming a surface barrier with the semiconductor substrate to a temperature at which the halide of the metal is reduced by hydrogen to deposit on the substrate, the deposited metal forming a compound with the semiconductor and the contact surface of the compound and the substrate being uneven.
14. A method according to claim 13 further comprising the step of heating the assembly at the same temperature as that of the preceding heating step for a selected period to readjust the barrier height at the contact portion.
15. A method of making a semiconductor surface barrier diode of Schottky type according to claim 13, wherein said semiconductor is silicon.
16. A method of making a semiconductor surface barrier diode of Schottky type according to claim 13, wherein said halide of a metal is one selected from the group consisting of WC16 and MoC15.
17. A method of making a semiconductor surface barrier diode of Schottky type according to claim 13, wherein said metal halide is WC16 and said temperature is above 1,000* C. but below 1,250* C.
18. A method of making a semiconductor surface barrier diode of Schottky type according to claim 13, wherein said metal halide is MoC15 and said temperature is above 900* C. but below the melting point of the semiconductor.
19. A method of making a semiconductor surface barrier diode of Schottky type comprising the steps of preparing a semiconductor substrate having at least one flat surface; making part of said flat surface uneven by a mechanical process; and depositing a metal capable of forming a surface barrier with the semiconductor substrate on the uneven surface, thereby obtaining an uneven interface of the semIconductor substrate and the metal.
20. A method of making a semiconductor surface barrier diode of Schottky type according to claim 19, wherein said semiconductor substrate is silicon.
21. A method of making a semiconductor surface barrier diode of Schottky type according to claim 19, wherein said semiconductor is silicon and said metal is selected from the group consisting of W, Mo, Au, Ag, Cr, Pt and Ti.
22. A method of making a semiconductor surface barrier diode of Schottky type according to claim 19, wherein said mechanical process for forming the uneven surface part is grinding with powder particles of hard material selected from the group consisting of A12O3 and SiC.
23. A semiconductor surface barrier diode of Schottky type comprising: a semiconductor substrate; and a layer contacting said semiconductor substrate, said layer being made of a material capable of forming a surface barrier with said semiconductor, the contact plane between said semiconductor substrate and said layer being of an uneven plane, the degree of uneveness of said plane being not less than about 100 angstroms but not larger than about 3 microns.
24. A method of making a semiconductor surface barrier diode of Schottky type comprising the steps of: preparing a silicon substrate having a flat surface; depositing a metal on said surface of said substrate by heating said silicon substrate in an atmosphere including a halide of said metal capable of forming a surface barrier with said semiconductor to a temperature at which said metal halide thermally decomposes; and heating the structure to a temperature at which the deposited metal reacts with said semiconductor substrate to form a compound of said metal and said semiconductor, with said compound producing an uneven interface with said semiconductor substrate.
25. A method of controlling the barrier height in the manufacture of a semiconductor surface barrier diode of Schottky type comprising the steps of: preparing a semiconductor substrate having at least one exposed surface, and depositing a metal, capable of forming a surface barrier with said semiconductor, on the surface of said substrate in such a manner that the height of the barrier is determined by the degree of unevenness of the interface between said semiconductor substrate and a compound produced by the reaction of said metal and said semiconductor substrate in the presence of heat, including heating for such length of time and at such temperature that the desired degree of unevenness is produced corresponding to a predetermined barrier height.
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