Substrate supported semiconductive stack
阅读：90发布：2023-04-24
专利汇可以提供Substrate supported semiconductive stack专利检索，专利查询，专利分析的服务。并且A plurality of junction containing semiconductive elements are bonded in series relation with semiconductive attachment elements of low resistivity bonded to opposite ends of the stack to form a semiconductive sub-assembly. The sub-assembly is bonded to metallized spaced lands with the junction containing elements spaced from the intervening surface of the substrate. Electrical conductors are bonded to the metallized lands in spaced relation to the semiconductive sub-assembly. The sub-assembly is etched in position on the lands and thereafter encapsulated with a passivant without intermediate handling. A plastic casement is molded around the sub-assembly and passivant. A plurality of substrates are initially integrally associated.，下面是Substrate supported semiconductive stack专利的具体信息内容。
1. A semiconductor device comprising an insulative substrate having a groove interposed between first and second spaced lands, said lands defining broad attachment surfaces, contact means overlying said attachment surfaces of said lands, a semiconductor sub-assembly including end-portions formed by axially spaced low resistivity attachment semiconductive elements of a first conductivity type throughout, a mid-portion including at least one junction containing semiconductive element, and means conductively bonding said end-portions to said mid-portion, said attachment semiconductive elements each having a lateral bonding surface, each of said lateral bonding surfaces overlying one of said attachment surfaces of said lands, said mid-portion and said bonding means overlying and being laterally spaced from the groove surface and being axially spaced from said lands, means forming low impedance electrical interconnections between said lateral bonding surfaces of said attachment semiconductive elements and said contact means overlying said attachment surfaces of said lands, terminal lead means spaced from said semiconductor sub-assembly and conductively associated therewith by said conductive means associated with each of said lands, and means protectIvely encapsulating said semiconductor subassembly.
2. A semiconductor device according to claim 1 in which said mid-portion is comprised of a plurality of serially related junction containing semiconductive elements.
3. A semiconductor device according to claim 1 in which said means conductively bonding said end portions to said mid-portion is comprised of a metal chosen from the class consisting of aluminum, gold, and silver.
4. A semiconductor device according to claim 1 in which said conductive means associated with said lands exhibits a melting point below that of said means conductively bonding said end portions to said mid-portion.
5. A semiconductor device comprising an insulative substrate having first and second lands upstanding above an intervening surface, metallization overlying each of said lands and absent from said intervening surface, a semiconductive sub-assembly comprising a plurality of junction containing semiconductive elements, a pair of low resistivity attachment semiconductive elements of like conductivity type throughout, and means bonding said junction containing semiconductive elements in series stacked relation and one of said attachment elements to each of opposite ends of said stacked junction containing semiconductive elements, each of said attachment elements overlying one of said lands and bonded to said metallization associated therewith, said junction containing elements and said bonding means associated therewith being spaced from said lands and said metallization, passivant means encapsulating at least said junction containing semiconductive elements and extending between said junction containing semiconductive elements and said sub-strate, and means cooperating with said substrate protectively encasing said passivant means and said semiconductive sub-assembly.
6. The combination comprising an insulative substrate precursor having a plurality of grooves defining at least one central and two additional laterally spaced land including portions, said land including portions defining broad attachment surfaces, means associated with said insulative substrate precursor for adapting sub-division of said substrate precursor into segments each including two laterally spaced lands separated by a groove, a plurality of semiconductor sub-assemblies each including end-portions formed by axially spaced low resistivity attachment semiconductive elements of a first conductivity type throughout, a mid-portion including at least one junction containing semiconductive element, and means conductively bonding said end-portions to said mid-portion, said attachment semiconductive elements each having a lateral bonding surface, one lateral bonding surface of each of four of said semiconductor sub-assemblies overlying said attachment surface of said central land including portion, a remaining lateral bonding surface of each of said four semiconductor sub-assemblies overlying one of said attachment surfaces of said two additional laterally spaced land including portions, each of said semiconductor sub-assemblies being laterally spaced to lie within a separate one of said substrate precursor segments, said mid-portions and said bonding means overlying and being laterally spaced from the groove surfaces and being axially spaced from said attachment surfaces, and means forming low impedance electrical interconnections between said lateral bonding surfaces of said attachment semiconductive elements and said contact means overlying said attachment surfaces.
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 电子封装件及其制法 | 2020-05-11 | 410 |
| 具有缓冲材料和加强层的半导体器件 | 2020-05-11 | 777 |
| 封装基板、包含其的半导体封装和包含其的电子系统 | 2020-05-08 | 776 |
| 用于获得印刷电路的多层片材的设备和相关方法 | 2020-05-11 | 99 |
| 一种堆叠封装结构及其制备方法 | 2020-05-12 | 29 |
| 一种多芯片封装结构及制造方法 | 2020-05-11 | 760 |
| 一种闪烁晶体阵列及其制备方法 | 2020-05-08 | 512 |
| 集成半导体组合件及其制造方法 | 2020-05-08 | 867 |
| 电路基板及堆叠电路结构 | 2020-05-08 | 227 |
| 使用导线接合的混合式添加结构的可堆叠存储器裸片 | 2020-05-08 | 224 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
分析报告
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
QQ群二维码
意见反馈
意见反馈