High breakdown-voltage planar type semiconductor element
专利汇可以提供High breakdown-voltage planar type semiconductor element专利检索，专利查询，专利分析的服务。并且PURPOSE:To short-circuit a gate and a cathode in an element, and to prevent the large deterioration of trigger sensibility by forming a layer having the same conductivity type as a second base layer, surrounding the second base layer, to which the element is shaped, and bringing a cathode electrode into low-resistance contact with the layer. CONSTITUTION:A p-type layer 16 is isolated and shaped, surrounding a second base layer 3, and a cathode electrode 7 is brought into low-resistance contact with the p-type layer. According to the example, large displacement currents generated from a junction terminal section are discharged to the outside from the cathode electrode 7 brought into low-resistance contact with the p-type layer 16 even when OFF voltage having a large rate-of-rise is applied under an OFF state, thus preventing the generation of the break-through of an element. The p-type layer 16 and the second base layer 3 are isolated completely, thus obviating the short circuit of a second emitter layer 4 in an MIS-GTO and the second base layer 3, then generating no deterioration of trigger sensibility.，下面是High breakdown-voltage planar type semiconductor element专利的具体信息内容。
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