Semiconductor memory device
专利汇可以提供Semiconductor memory device专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain an excellent hold capable device fit for high density construction by a method wherein a film oxide on a substrate is reduced into an extremely thin gate oxide film and an erase wiring is not provided. CONSTITUTION:An n layer 23 provided with a bit wiring terminal B is only n layer on a p substrate. A gate oxide film 22'' is only 500Angstrom -100Angstrom thick in the vicinity of a field oxide film 22'. Next, as usual, a floating gate 24, an oxide film 25, and a controlling gate 26 are formed, and the gate 26 is provided with a word wiring terminal W. When to write, the terminal B is kept at 0V and the terminal W at a higher potential, for the utilization of the tunnel effect. When to erase, the terminal W is kept at 0V and the terminal B at a high positive potential, for the utilization of the avalanche effect for electrons to be discharged out of the floating gate 6 for the erasure of stored information. This setup eliminates a p well and an erase terminal, as the result of which the manufacturing process is simplified and the device is miniaturized or made denser that much.，下面是Semiconductor memory device专利的具体信息内容。
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|---|---|---|
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| 一种石油钻机的井场防爆电路装置 | 2020-05-08 | 365 |
| 一种FPC连接器 | 2020-05-08 | 986 |
| 一种接地性良好的FPC连接器 | 2020-05-08 | 938 |
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