Radio-frequency line
阅读：153发布：2023-01-01
专利汇可以提供Radio-frequency line专利检索，专利查询，专利分析的服务。并且A radio-frequency line suitable for use as an electrical supply lead to semiconductor components, comprising a semiconductor body containing at least one semiconductor component and a strip line comprising a supply lead and a sink which is provided on one surface of the semiconductor body, a dielectric layer being provided between the supply lead and the sink.，下面是Radio-frequency line专利的具体信息内容。
1. A radio-frequency line suitable for use as an electrical supply lead to semiconductor components, comprising a semiconductor body, at least one semiconductor component in said semiconductor body, said semiconductor component including at least two active semiconductor regions, with each of said regions extending to one surface of said semiconductor body and being provided, at said surface, with a respective contact, at least one strip line comprising a supply lead and a sink provided on said one surface of said semiconductor body, a dielectric layer between the supply lead and sink, said supply lead, sink and dielectric layer being formed as layers on said one surface, with said supply lead and said sink each being electrically connected to a respective contact and superimposed with respect to one another to form a high frequency line with a given characteristic impedance, and separate external connection means formed as part of each of said supply lead and said sink, each said connection means having an exposed surface for electrically connecting said supply lead and said sink to an external electrical circuit.
2. A radio-frequency line as claimed in claim 1, including two strip lines and in which conducting paths are connected to said contacts and form supply leads for said strip lines, and in which said conducting paths and said one surface of the semiconductor body are covered by said dielectric layer which forms an insulating layer and in which the dieleCtric layer is at least partially covered by a metal layer which serves as said sink, an aperture being provided in the dielectric layer to allow said sink to be connected to one of said contacts of said semiconductor components.
3. A radio-frequency line as claimed in claim 2, in which a further insulating layer is provided between said one surface of the semiconductor body and said conducting paths to insulate said paths from said body, said dielectric layer covering said conducting paths and said further insulating layer and apertures being provided both in the dielectric layer and said further insulating layer to allow said sink to be connected to one of the contacts of said semiconductor components.
4. A radio-frequency line as claimed in claim 2, in which the width of said conducting paths corresponds to the thickness of the dielectric layer.
5. A radio-frequency line as claimed in claim 4, in which the conducting paths are about 3 Mu m wide and the dielectric layer is about 3 Mu m thick.
6. A radio-frequency line as claimed in claim 1, in which the semiconductor body consists of silicon or germanium.
7. A radio-frequency line as claimed in claim 1, in which the semiconductor body consists of semi-insulating gallium arsenide.
8. A radio-frequency line as claimed in claim 1, in which the insulating layers consist of silicon dioxide or silicon nitride.
9. A radio-frequency as claimed in claim 1, in which the sink is structured and divided to form a plurality of independent lines.
10. A radio-frequency line as claimed in claim 1, in which the supply lead and sink consist of gold.
11. A radio-frequency line as claimed in claim 1, in which the supply lead and sink consist of copper.
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