Radio frequency transistor package
阅读：749发布：2023-01-09
专利汇可以提供Radio frequency transistor package专利检索，专利查询，专利分析的服务。并且A transistor die is mounted over a pair of mutually opposed ceramic filled microstrip lines having a common ground plane, one of these strip lines being an input strip line and the other being an output strip line. An extention of the common ground plane member extends up through the dielectric fill material of the strip lines into the gap between the mutually opposed ends of the adjacent strip lines to form a common connector terminal. Two sets of leads interconnect the common connector terminal and the input strip line with the base and the emitter electrodes on the transistor die, whereas the collector electrode of the transistor die is electrically and thermally connected to the output strip line.，下面是Radio frequency transistor package专利的具体信息内容。
1. In a radio frequency transistor package, transistor die means having base, emitter and collector regions of semiconductive material, base, emitter and collector electrode structures affixed to said transistor die for making electrical contact to said base, emitter and collector regions, respectively, of said transistor die, strip line means having input and output electrically conductive strips electrically isolated from each other for dc potential and disposed overlaying a common electrically conductive member in spaced relation therefrom for defining input and output strip lines, respectively, dielectric slab means interposed between said input and output conductive strips and said common conductive member to define dielectric filled sections of input and output strip line, said input and output conductive strips having mutually opposed edges spaced apart to define an elongated gap therebetween, said transistor die means being mounted overlaying said strip line means, output connector means electrically interconnecting said output conductive strip and said collector electrode structure, input connector means electrically interconnecting said input conductive strip and one of said base and emitter electrode structures, common connector means electrically interconnecting said common conductive member and the other one of said base and emitter electrodes, and said common connector means having at least a portion thereof interposed in the elongated gap between said input and output conductive strips.
2. The apparatus of claim 1 wherein said dielectric filled input and output strip lines are each dimensioned to have a characteristic impedance less than 20 ohms.
3. The apparatus of Claim 1 wherein said strip line means includes a ceramic wafer structure, said ceramic wafer structure being bonded to a metallic layer on one major face thereof to form the common conductive member of said strip line, and said wafer structure having a pair of metalized strips on the second major face of said wafer which is opposed to said first face to form said input and output conductive strips of said input and output strip lines.
4. The apparatus of claim 3 wherein said ceramic wafer structure is apertured in registration with said elongated gap between the opposed edges of said input and output strip conductors to accommodate said common electrical connector means, and wherein said common electrical connector means includes an elongated electrically conductive terminal strip means extending longitudinally of said elongated gap between said input and output strip conductors and upstanding from said common conductive member by a sufficient distance to extend substantially through said aperture in said ceramic wafer structure.
5. The apparatus of claim 4 wherein said common electrical connector means also includes a plurality of wire leads interconnecting the respective electrode structure on said transistor die and said terminal strip means.
6. The apparatus of claim 4 wherein said transistor die means comprises a wafer having a pair of opposed major faces with said collector electrode structure on one major face and said base and emitter electrodes on the other major face, and wherein said die is mounted overlaying said output strip conductor in electrical contact with and in heat exchanging relation therewith, and wherein said input and common electrical connector means each includes a plurality of electrically conductive wires interconnecting said electrode structures and said common terminal strip means and said input strip conductor.
7. The apparatus of claim 6 wherein said electrically connecting wires are generally directed transversely of said elongated gap between the opposed edges of said input and output conductive strips.
8. The apparatus of claim 7 wherein said wires are arranged in an alternating sequence such that said common interconnecting wires alternate with the input connecting wires as taken in a direction longitudinally of said elongated gap.
9. The apparatus of claim 4 wherein said transistor die means comprises a semiconductive wafer having a pair of opposed major faces with said collector, base and emitter electrode structures disposed on a common major face of said semiconductive wafer, and wherein said die is mounted overlaying said strip line means with said common major face of said semiconductive wafer facing toward and overlaying said strip line means with said collector electrode structure in registration with and in electrical contact with said output strip conductor, and said die bridging said elongated gap between the opposed edges of said input and output strip conductors of said strip line means.
10. The apparatus of claim 9 wherein said input and common electrical connector means for making electrical connection between said input conductive strip and said common terminal strip includes, electrically conductive bumps on said common major face of said transistor die, said conductive bumps being disposed in registration with the respective input conductive strip and common terminal strip to which said connector means is to make electrical contact.
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