专利汇可以提供Cleaning method of photomask专利检索,专利查询,专利分析的服务。并且PURPOSE:To clean a photomask to be used as an original plate in photolithography without damaging the metallic film for light shielding, by dipping the photomask in a bath of a sulfuric acid or the like while applying a voltage between the photomask and the counter electrode thereof. CONSTITUTION:A photomask 8 formed with a figured patternlike chromium film 12 on a glass substrate 10 provided with a light transmittable conductive film 11 is subjected to a cleaning treatment. More specifically, the above-mentioned photomask 8 (a symbol 9 is a clip) and a platinum plate 14 are dipped perpendicularly in the sulfuric acid 2 in a cleaning tank 1. The acid 2 is heated to about 90-120 deg.C with a heater 3 and foam 15 of ozone-contg. air is ejected through a blow pipe 5 and a blow-out port 6 into the acid 2 to generate a Caro's acid. On the other hand, about 1.5-2.5V DC voltage is applied between the plate 14 (cathode) and a chromium film 12 (anode) by a power source 13. Therefore, the film 12 is immobilized by the oxide film formed on the surface thereof and since it is insoluble, only the foreign matter such as photoresist sticking on the mask 8 is dissolved away in the Caro's acid.,下面是Cleaning method of photomask专利的具体信息内容。
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