Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices
专利汇可以提供Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices专利检索，专利查询，专利分析的服务。并且@ An a-Si FET comprising electrically conductive source and drain regions 25, 26 supported by an insulating substrate 21; a layer of amorphous silicon 28 which is separately deposited in a space between said source and drain regions 25, 26 so as to engage the source and drain regions; source and drain electrodes 23, 24 electrically connected with said source and drain regions respectively; a gate electrode 20 disposed adjacent said layer of amorphous silicon; and an insulating layer 22 separating the gate electrode from the amorphous silicon layer; the arrangememt being such that, in the ON state of the FET, a direct current-path 27-27' is established in the layer of amorphous silicon which is disposed in said space. A low cost, low- temperature substrate such as soda glass may be used and the a-Si FET may be of the thin film type. Such an a-Si FET can be used in an LCD device which is addressed using one or more of the FET's.，下面是Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices专利的具体信息内容。
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