Semiconductor light-receiving element
专利汇可以提供Semiconductor light-receiving element专利检索，专利查询，专利分析的服务。并且PURPOSE: To minimize noise by using a material with a relatively small prohibition band width ΔWg at high resistance in contact with a shot key electrode, using a material with a large ΔWg at low resistance in contact with an ohmic electrode and radiating light from the side of large ΔWg.
CONSTITUTION: A high-resistance layer 9 with relatively small ΔWg, such as, In
x Ga
1-x As, etc., is provided with a shot key electrode 3, and a low-resistance layer 10 with relatively large ΔWg, such as GaAs, etc., is provided with an ohmic electrode 7 and a light-radiating window 11. A reflection-preventing film 4 and a guard ring 6 are also provided. By employing n-type for semiconductor layers 9 and 10, an ionization rate of a positive hole is assumed to be larger than that of an electron. If a light-radiating energy of ΔWg9 11 is chosen, a light radiated in the direction of an arrow 8 is made to penetrate through the low-resistance layer 10 and absorbed only by the high-resistance layer 9, and when this element is used as an APD, since an electron does not move due to a barrier qϕB of the shot key joining section and only the positive hole is poured from the layer 9 into a high electric field region of the joining section, noise is lowered.
COPYRIGHT: (C)1980,JPO&Japio，下面是Semiconductor light-receiving element专利的具体信息内容。
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