Preparation of semiconductor device
专利汇可以提供Preparation of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To mount a SOS device readily by a method wherein a amorphous Si layer is provided on the under surface of an insulation substrate by means of glow discharge at a low temperature so as to make a metalized layer.
CONSTITUTION: A CVD SiO
2 film 5 is provided on a wafer on which Al wiring 4 has been completed, and an electrode pad is opened. After grinding the back surface of a sapphire substrate, SiH
4 is decomposed using glow discharge, thenamorphous Si 6 is piled. At this time, the sapphire substrate is kept at from the normal temperature to about 300°C. According to this method, the strength of adhesion between the amorphous Si and the sapphire substrate is sufficient for preactical use despite piling up at a low temperature. Lastly, the amorphous Si 6 is mounted on the plate of a sealing case 8 as a metallized layer using Si-Au brazing alloy. In this method, the chip of an SOS device can be sealed in a case by the use of the same method and device for an Si substrate.
COPYRIGHT: (C)1980,JPO&Japio，下面是Preparation of semiconductor device专利的具体信息内容。
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