Growing method for compound semiconductor single crystal
专利汇可以提供Growing method for compound semiconductor single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE: To grow high purity compd. semiconductor single crystal by washing the surface of a device which is brought into contact with a liquid sealer before growth is restarted and baking this surface in a vacuum in the case of growing compd. semiconductor single crystal by a Czochralski process.
CONSTITUTION: Compd. semiconductor single crystal 11 is grown by a Czochralski process in an airtight vessel (constituted of a vessel main body 1 and a cylindrical cover 2) filled with a volatile gaseous element. At this time, before the growth is restared, the surface of a device brought into contact with a liquid sealer, namely the surface of the device brought into contact with the liquid sealer in an annular groove 3, a partial surface wherein a pan 7 is brought into contact with the liquid sealer of the lower shaft 5 and a partial surface wherein a pan 12 is brought into contact with the liquid sealer of the upper shaft 9 are washed respectively by a solvent. After stuck liquid sealer is removed, the surface is baked in a vacuum. Thereby the fresh liquid sealer is cleaned and melt 6 of the raw material is prevented from being contaminated by the liquid sealer.
COPYRIGHT: (C)1991,JPO&Japio，下面是Growing method for compound semiconductor single crystal专利的具体信息内容。
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