Selective etching method of organic insulating film
专利汇可以提供Selective etching method of organic insulating film专利检索，专利查询，专利分析的服务。并且PURPOSE: To make a high-precision process possible in a simple method and eliminate trouble at a chemicals use time by performing a dry etching utilizing plasma when polyimide or polyimide-system resin is etched.
CONSTITUTION: SiO
2 film 2 is caused to adhere semiconductor substrate 1, and Al wiring film 3 is formed on film 2, and polyimide film 4 is caused to adhere to all the surface. Next, Si
3 N
4 film 5 to be an etching mask of film 4 is caused to adhere to film 4 by the plasma method by which this film can be evaporated at a temperature of approximately 280°C, and mask 6 of the photo resistor film is formed. After that, film 5 is subjected to plasma etching while being covered with mask 6 at a Freon atmosphere, and mask 6 is removed to subject polyimide 4 to plasma etching by using residual film 5 as a mask. As a result, the process precision is always constant, and reliability is very high.
COPYRIGHT: (C)1979,JPO&Japio，下面是Selective etching method of organic insulating film专利的具体信息内容。
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