| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 181 | 利用氣相介質中之電子迴旋共振產生沿軸向顯著延伸之電漿的裝置 | TW102132427 | 2013-09-09 | TWI587752B | 2017-06-11 | 施密特 比特; SCHMIDT, BEAT; 歐 克里斯多福; HEAU, CHRISTOPHE; 莫林皮瑞爾 菲力浦; MAURIN-PERRIER, PHILIPPE |
| 182 | 利用氣相介質中之電子迴旋共振產生沿軸向顯著延伸之電漿的裝置 | TW102132427 | 2013-09-09 | TW201415958A | 2014-04-16 | 施密特 比特; SCHMIDT, BEAT; 歐 克里斯多福; HEAU, CHRISTOPHE; 莫林皮瑞爾 菲力浦; MAURIN-PERRIER, PHILIPPE |
| 一種裝置包含：至少二同軸波導(4)，每個波導形成中心導體(1)及外部導體(2)，用於將微波導入製程腔室，其中沿一方向延伸之磁性電路(21、22)結合至少二電磁波輸入波導(4)，其中磁性電路產生可達成電子迴旋共振條件的磁場接近波導以包圍波導(4)。 | ||||||
| 183 | 以電子迴旋共振微波電漿化學氣相沈積法製造一維奈米材料的方法 | TW088100434 | 1999-01-12 | TW452604B | 2001-09-01 | 施漢章; 宋興禮; 蔡尚華 |
| 本發明提供一種製造一維奈米材料的方法，包括在電子迴旋共振(ECR)狀態下之微波電漿系統中，以具有複數個直通性孔洞之膜為基材，使反應氣體進行化學氣相沈積，以在孔洞中成長一維奈米材料。該膜可為鋁陽極處理膜，氧化矽膜，或高分子膜。合成條件為:微波功率為400至1000W，合成壓力為5至20×10¯2 torr，直流偏壓為O至-500V，溫度為室溫至1000℃，膜之孔洞具有30nm至350nm的直徑。本發明並首次成功地合成出一維奈米碳氮材料。 | ||||||
| 184 | Apparatus and method for generating X-ray using electron cyclotron resonance ion source | US13475465 | 2012-05-18 | US08693637B2 | 2014-04-08 | Byoung Seob Lee; Mi Sook Won; Jang Hee Yoon; Jin Yong Park; Se Yong Choi |
| An apparatus for generating X-ray may include: a plasma chamber; a magnet unit for applying a magnetic field to the plasma chamber, the magnet unit configured to allow the control of the magnitude of the minimum magnetic field in the plasma chamber without change in structure; a microwave generator for applying microwaves to the plasma chamber; a reaction gas injected into the plasma chamber for generating X-ray through electron cyclotron resonance by the magnetic field and the microwaves; a variable guide for focusing the generated X-ray; and a variable extractor for outputting the focused X-ray from the plasma chamber. | ||||||
| 185 | Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained | US10399175 | 2001-10-26 | US07303790B2 | 2007-12-04 | Marc Delaunay; Cyril Vannufel |
| Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of the deposition chamber and facing the substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10−3 mbars, in the magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate. The substrate surface includes raised and/or lowered reliefs. The invention concerns the SWNTs thus obtained. | ||||||
| 186 | Electron cyclotron resonance (ecr) plasma source having a linear plasma discharge opening | US10571161 | 2004-09-08 | US20060254521A1 | 2006-11-16 | Joachim Mai; Dietmar Roth |
| The invention relates to an electron cyclotron resonance (ECR) plasma source having a linear plasma discharge opening (9, 27, 28, 30), comprised of a plasma chamber, inside of which a centered wave distributor is provided, and having a multi-pole magnetic field arrangement in the area of the linear plasma discharge opening. The centered wave distributor consists of at least two separate wave distributors (3, 4) that are placed inside a respective partial plasma chamber (1, 2, 21, 22, 32, 23). A linear partial plasma discharge opening (7, 8, 23, 24, 34, 35) and multi-pole magnetic field arrangements (10, 11, 38, 39) are provided on each partial plasma chamber (1, 2, 21, 22, 32, 23). The at least two linear plasma discharge openings (7, 8, 23, 24, 34, 35) are arranged with regard to one another in such a manner that, together, they form at least one plasma discharge opening (9, 27, 28, 30) of the ECR plasma source. | ||||||
| 187 | Method and device for irradiating ions in an ion cyclotron resonance trap with photons and electrons | US10397634 | 2003-03-26 | US06803569B2 | 2004-10-12 | Youri O. Tsybin; Gökhan Baykut |
| The present invention relates to a method and a device for irradiating ions in a ion cyclotron resonance (ICR) trap with photons and/or electrons. For electron irradiation a hollow electron emitter is used, through the hole of which a light beam can be sent into the ICR trap. The emitter generates a hollow, tubular electron beam. In a special application low energy ions within the tubular electron beam are irradiated with photons. The ions can be cyclotron-excited mass selectively, by which they enter the electron beam and interact with electrons. | ||||||
| 188 | Electron-cyclotron resonance type ion beam source for ion implanter | US10032425 | 2001-12-31 | US20030234369A1 | 2003-12-25 | Yuri Glukhoy |
| An ECR ion-beam source for use in an ion implanter has a sealed plasma chamber in which plasma is excited by microwave radiation of 2.45 GHz in combination with an external magnetic field generated by permanent magnets surrounding the plasma chamber. The magnets cause electron-cyclotron resonance for the electrons of the plasma thus creating conditions for efficient absorption of the microwave energy. The same magnets generate a magnetic field, which compresses the plasma toward the center for confining the plasma within the plasma chamber. The ion source also has an RF pumping unit that pumps into the plasma the RF energy. The RF pumping unit has a unique additional function of RF magnetron sputtering of solid targets converted into a gaseous working medium used for implantation in an ionized form. For obtaining elongated belt-type ion beams (having a width of 1 m or longer), the ion source may contain a microwave pumping system having several output windows arranged in series along the axis of the plasma chamber and on diametrically opposite sides thereof. The windows are continuously cleaned from the contaminants that might precipitate onto their surfaces. A standard-type sand blaster can be used for cleaning of the windows. | ||||||
| 189 | Method and apparatus for treating surfaces with a plasma generated by electron cyclotron resonance | US09849065 | 2001-05-04 | US20020172780A1 | 2002-11-21 | Ward Dean Halverson |
| The present invention provides methods and apparatus for plasma treatment of tubing surfaces. In one aspect, the invention provides a method for treating a tubing surface which calls for generating a gaseous plasma within a spatially localized region of space by electron cyclotron resonance (ECR), and exposing the surface to this plasma for a selected time period to treat the surface. Subsequent to the plasma treatment, the treated surface can be optionally coated with a selected compound, such as a bioactive material, e.g., anti-biotic or anti-coagulants. | ||||||
| 190 | Coaxial microwave applicator for an electron cyclotron resonance plasma source | US676448 | 1996-07-08 | US5707452A | 1998-01-13 | Raphael A. Dandl |
| A method and apparatus are disclosed employing a microwave applicator for use with an electron cyclotron resonance (ECR) plasma source for applications including, but not limited to, etching and chemical vapor deposition. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises one or more pairs of slotted antenna arrays, injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion. The position and orientation of the radiating stubs cause microwave power to be launched into the plasma in the form of propagating waves with a polarization suitable of electron cyclotron heating. The applicator is coupled to a microwave power source that preferably supplies microwave power at a frequency of 2.45 GHz. A magnetic-field free region produces uniformity of plasma distribution in a plasma stream that approaches an outlet in the chamber. The plasma stream flows through the plasma forming region toward the specimen with characteristics of high density, uniformity over transverse dimensions larger than the specimen, and low plasma temperature, while operating at gas pressures which can be varied over a wide range. | ||||||
| 191 | Method and apparatus for coupling a microwave source in an electron cyclotron resonance system | US589078 | 1990-09-27 | US5111111A | 1992-05-05 | James E. Stevens; Joseph L. Cecchi; Patrick L. Colestock |
| A microwave source is coupled to an electron cyclotron resonance (ECR) system by circularly polarizing the microwave energy from the source in an angular direction with cooperates with the ECR system's magnetic field to produce electron cyclotron resonance, and coupling the circularly polarized microwave energy to the plasma using a quarter wave vacuum window transformer having a dielectric constant which matches the impedance of the circularly polarized microwave energy to the impedance of the plasma. The impedance matching transformer is preferably a vacuum window of the ECR chamber having quarter wave thickness and the appropriate dielectric constant. For high density plasmas in a standard ECR system of 6 cm radius an alumina window 0.98 cm thick procides optimum coupling. The reflected power from the plasma is thereby minimized to provide a dense plasma for the ECR tool while reducing or eliminating the need for manual external tuners for the microwave source. | ||||||
| 192 | 藉由電子迴旋共振使用基本電漿源以處理至少一零件的表面之方法及裝置 | TW097139345 | 2008-10-14 | TWI428953B | 2014-03-01 | 施密特 比特; SCHMIDT, BEAT; 歐 克里斯多福; HEAU, CHRISTOPHE; 莫林皮瑞爾 菲力浦; MAURIN-PERRIER, PHILIPPE |
| 193 | Lens for electron capture dissociation, Fourier transform ion cyclotron resonance mass spectrometer comprising the same and method for improving signal of Fourier transform ion cyclotron resonance mass spectrometer | US14351524 | 2012-10-10 | US09129788B2 | 2015-09-08 | Myoung Choul Choi; Sang Hwan Choi; Se Gyu Lee; Jeong Min Lee |
| A lens for electron capture dissociation may include: a first electrode and a second electrode spaced apart from each other and arranged along a first direction; and a third electrode and a fourth electrode spaced apart from each other and arranged along a second direction perpendicular to the first direction. The first electrode and the second electrode may be disposed in a space in which a magnetic field is formed in the first direction and trap electrons. The third electrode and the fourth electrode may be in the form of a flat plate and may apply an electric field to the trapped electrons in the second direction. | ||||||
| 194 | Process for the deposition by electron cyclotron resonance plasma of electron-emitting carbon films under the effect of an electric field applied | US09330871 | 1999-06-11 | US06337110B1 | 2002-01-08 | Marc Delaunay; Marie-Noëlle Semeria |
| The present invention relates to a process for electron cyclotron resonance plasma deposition of electron-emitting carbon films, in which by injecting a microwave power into a plasma chamber incorporating an electron cyclotron resonance zone (9), ionization takes place of a gaseous mixture under a low pressure, the thus created ions and electrons diffusing along the magnetic field lines (6) to a substrate (3), the gaseous mixture comprising organic molecules and hydrogen molecules. Said process comprises the following stages: heating the substrate (3), creating a plasma from the ionized gaseous mixture, creating a potential difference between the plasma and the substrate, diffusion of the plasma up to the substrate (3) which, by heating, has reached a temperature such that said electron-emitting material is deposited on the substrate. | ||||||
| 195 | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions | US806504 | 1991-12-13 | US5279669A | 1994-01-18 | Young H. Lee |
| A plasma reactor for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power by inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions. | ||||||
| 196 | Device for generating plasma having a high range along an axis by electron cyclotron resonance (ECR) from a gaseous medium | US14425409 | 2013-09-04 | US09490102B2 | 2016-11-08 | Beat Schmidt; Christophe Heau; Philippe Maurin-Perrier |
| The device includes at least two coaxial waveguides each formed of a central conductor and of an external conductor to bring microwaves into a treatment chamber. The at least two electromagnetic wave injection guides are combined with a magnetic circuit elongated in one direction. The magnetic circuit surrounding the waveguides by creating a magnetic field capable of achieving an ECR condition close to the waveguides. | ||||||
| 197 | System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same | US10124057 | 2002-04-17 | US06851939B2 | 2005-02-08 | Joong-Kee Lee; Dal-Keun Park; Byung-Won Cho; Joo-Man Woo; Bup-Ju Jeon |
| A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided. | ||||||
| 198 | Device for exciting a plasma to electron cyclotron resonance by means of a wire applicator of a static magnetic field and of a microwave field | US202026 | 1994-02-25 | US5536914A | 1996-07-16 | Jacques Pelletier; Antoine Durandet |
| The invention relates to a plasma excitation device comprising at least one electrically conductive wire applicator fed form an energy source in the microwave range and means for creating a magnetic field and adapted to create at least one surface having a constant magnetic field of a flux density that corresponds to electron cyclotron resonance. According to the invention, the wire applicator includes the means for creating the magnetic field, with the main component thereof being situated in a cross-section of the applicator and extending over at least a fraction of the length of the applicator, said applicator thus constituting an applicator both of a microwave electric field and of a static magnetic field. | ||||||
| 199 | System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same | US10124057 | 2002-04-17 | US20030000827A1 | 2003-01-02 | Joong-Kee Lee; Dal-Keun Park; Byung-Won Cho; Joo-Man Woo; Bup-Ju Jeon |
| A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided. | ||||||
| 200 | 具一鍍層防護之電子迴旋共振電漿源及鍍層防護之應用 ECR-PLASMA SOURCE HAVING A PROTECTIVE COATING AND METHOD FOR USING THE PROTECTIVE COATING | TW099142745 | 2010-12-08 | TW201138562A | 2011-11-01 | 普呂斯特爾 馬力歐; 亞克曼 埃克哈特 |
| 本發明係關於一種電子迴旋共振(ECR)電漿源,由一機殼、一中央波分配器(12),及介於機殼與中央波分配器(12)間之一鍍層防護(7)構成。在本發明中,鍍層防護(7)由一有機或礦物質纖維材料製成。纖維材料可為一由玄武岩(Basalt)、碳、或氧化鋁製成之纖維織物或毛氈織物,且鍍層防護(7)面向電漿室之表面可至少具有一局部開放之紡織結構。 鍍層防護可應用於遮蔽任意表面,該表面係暴露於一電漿中,卻在所使用之電漿過程中無需鍍層。圖二 | ||||||
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