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Improved perovskite thin film
申请号	JP10853790	申请日	1990-04-24	公开(公告)号	JPH0369512A	公开(公告)日	1991-03-25
申请人	Battelle Memorial Inst;			发明人	SUKOTSUTO ERU SUWAATSU; PIITAA JIEI MERINGU;
摘要	PURPOSE: To easily obtain a crystalline thin film of a perovskite material having a crystallinity by successively depositing two kinds of specific sol-gel perovskite precursor materials on a substrate and heat treating the same. CONSTITUTION: The sol-gel perovskite precursor material (e.g.; lead titanate precursor material, strontium titanate precursor material) is deposited on the substrate (e.g.; molten silica, alumina). This first deposition layer is then heat treated to form the perovskite thin-film material. The second layer of the sol-gel perovskite precursor material (e.g.; zrcanium lead titanate precursor) having the crystallization to the perovskite phase on the substrate is deposited thereon and is heat treated to form the perovskite thin-film material, by which the perovskite thin film having the high crystallinity is obtd. COPYRIGHT: (C)1991,JPO
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