Semiconductor device manufacturing method |
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| 申请号 | US14821496 | 申请日 | 2015-08-07 | 公开(公告)号 | US09922858B2 | 公开(公告)日 | 2018-03-20 |
| 申请人 | FUJI ELECTRIC CO., LTD.; | 发明人 | Masaaki Tachioka; Tsunehiro Nakajima; | ||||
| 摘要 | Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. | ||||||
| 权利要求 | |||||||
| 说明书全文 | |||||||
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