CIRCUITS AND OPERATING METHODS THEREOF FOR CORRECTING PHASE ERRORS CAUSED BY GALLIUM NITRIDE DEVICES |
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申请号 | US15198283 | 申请日 | 2016-06-30 | 公开(公告)号 | US20180007650A1 | 公开(公告)日 | 2018-01-04 |
申请人 | MACOM Technology Solutions Holdings, Inc.; | 发明人 | Damian McCann; | ||||
摘要 | Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error. | ||||||
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