序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
181 保护带贴附方法和其装置以及保护带分离方法和其装置 CN200410102276.7 2004-12-14 CN1649102A 2005-08-03 山本雅之
把一种保护带以一个相对于在一个制品表面上的各电路图形之间形成的许多低凹部任选的度贴附在一个制品的表面上,这种制品的表面具有高低不平处,并且表面上制成有许多以方阵形式排列的作为芯片的电路图形。然后把一种粘胶带以一个相对于在所述制品表面上的所述各电路图形之间形成的许多低凹部任选的角度粘贴于所述保护带的表面,而后通过以一个相对于所述低凹部的任选的角度揭下与保护带粘贴成一体的粘胶带而使所述保护带脱离所述制品表面。
182 POLYIMIDE RESIN, RESIN COMPOSITION USING SAME, AND LAMINATED FILM PCT/JP2015055222 2015-02-24 WO2015129682A9 2016-10-20 TOMIKAWA MASAO; WATANABE TAKUO; LEE CHUNGSEO
Provided are a polyimide resin having high heat resistance which is free of voids even in a large area and is capable of uniform temporary adhesion, and a resin composition and a laminated film using the same. The present invention is a polyimide resin having at least an acid anhydride residue and a diamine residue, the polyimide resin including at least 60 mol% of a polysiloxane-based diamine residue in the total amount of diamine residue.
183 ULTRATHIN WAFER DEBONDING SYSTEMS PCT/IB2012002736 2012-10-30 WO2013064906A3 2013-07-25 LEE MASAHIRO
An improved semiconductor wafer debonding system, method, and apparatus, including a stress-free means for multi-axis debonding utilizing a specialized tool or fixture having at least one ultrasonic transducer.
184 METHODS OF TRANSFERRING DEVICE WAFERS OR LAYERS BETWEEN CARRIER SUBSTRATES AND OTHER SURFACES PCT/US2012045980 2012-07-09 WO2013006865A2 2013-01-10 MCCUTCHEON JEREMY; FLAIM TONY D; BAILEY SUSAN
New temporary bonding methods and articles formed from those methods are provided. In one embodiment, the methods comprise coating a device or other ultrathin layer on a growth substrate with a rigid support layer and then bonding that stack to a carrier substrate. The growth substrate can then be removed and the ultrathin layer mounted on a final support. In another embodiment, the invention provides methods of handling device layers during processing that must occur on both sides of the fragile layer without damaging it. This is accomplished via the sequential use of two carriers, one on each side of the device layer, bonded with different bonding compositions for selective debonding.
185 半导体用片和光半导体装置 CN201420056563.8 2014-01-29 CN203923079U 2014-11-05 小名春华; 松田广和; 片山博之
本实用新型提供光半导体用片和光半导体装置。所述光半导体用片具备由第1有机树脂形成的粘合层,以及设置于粘合层的厚度方向一面、由第2有机硅树脂形成的非粘合层。
186 DEBONDING TEMPORARILY BONDED SEMICONDUCTOR WAFERS PCT/US2012062480 2012-10-29 WO2013063603A3 2013-07-11 GEORGE GREGORY; ROSENTHAL CHRISTOPHER
Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.
187 IMPROVED APPARATUS FOR TEMPORARY WAFER BONDING AND DEBONDING PCT/US2010031302 2010-04-15 WO2010121068A2 2010-10-21 GEORGE GREGORY; JOHNSON HALE; GORUN PATRICK; HUGHLETT EMMETT; HERMANOWSKI JAMES; STILES MATTHEW; KUHNLE MICHAEL; PATRICIO DENNIS
An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.
188 BONDED ASSEMBLIES PCT/US2005013237 2005-04-19 WO2005118291A3 2006-12-28 STARK DAVID H
A process for manufacturing bonded assemblies (100) comprises providing a first layer (106) formed of a substrate material that is one of an electrical conductor, a semiconductor and an electrical insulator. A second layer (102) of an electrically insulation material is formed on the top surface of the first layer (106), the second layer (102) having a top surface (103). A third layer (104) formed of a semiconductor material is disposed near the top surface (103) of the second layer (102). The third layer (104) is pressed against the top surface (103) of the second layer (102) with sufficient force to produce a predetermined contact pressure along a junction region between the second and third layers (102, 104). The junction regions heated to produce a predetermined initial temperature in the junction region. The predetermined contact pressure and an elevated temperature are maintained in the junction region until a diffusion bond forms between the second and third layers (103, 104).
189 TOOL FOR WAFER BONDING IN A VACUUM PCT/US9908867 1999-04-22 WO9960607A3 2000-05-04 ISMAIL M SALLEH; WONG JEFFREY K
A jig (200) for a fusion bonding process includes a sealable chamber (212) having a first station for a first wafer (110) and a second station for a second wafer (120). The wafers are initially separated from each other while a vacuum is created in the chamber. In one embodiment of the invention, movably mounted spacers (230) separate the wafers (280, 290) while the vacuum is formed. The spacers are then moved to allow the wafers to come into contact and form an initial bond (112). In another embodiment, wafers in the first and second stations are tilted away from each other so that gravity keeps the wafers separated while the vacuum is formed. After the vacuum is formed, the chamber is rotated so that gravity pushes the two wafers together. In either embodiment, a mechanical pushing system or vibrational energy can apply force to induce or improve the initial bond. The initial bond seals cavities (115) formed between the wafers.
190 METHOD FOR BONDING SUBSTRATES PCT/EP2012064736 2012-07-26 WO2014015912A9 2014-12-04 WIMPLINGER MARKUS
The present invention relates to a method for bonding a first contact area (3) of a first, at least predominantly transparent substrate (1) to a second contact area (4) of a second, at least predominantly transparent substrate (2) wherein an oxide is used at at least one of the contact areas for bonding, from which oxide an at least predominantly transparent connecting layer (14) having: an electrical conductivity of at least 10e1 S/cm2 (measurement: four-point method, relative to temperature of 300K) and an optical transmittance of greater than 0.8 (for a wavelength range of 400 nm to 1500 nm) is formed at the first and second contact areas (3 4).
191 ULTRATHIN WAFER DEBONDING SYSTEMS PCT/IB2012002736 2012-10-30 WO2013064906A4 2013-09-19 LEE MASAHIRO
An improved semiconductor wafer debonding system, method, and apparatus, including a stress-free means for multi-axis debonding utilizing a specialized tool or fixture having at least one ultrasonic transducer.
192 SECURING MECHANISM AND METHOD FOR WAFER BONDER PCT/US2011054632 2011-10-03 WO2012047810A3 2012-06-21 CANALE STEVE; ZAPP DAVID J
Disclosed are various features associated with a securing mechanism for a wafer bonder. In certain situations, operation of securing mechanisms can generate undesirable particles and debris, and some them can be introduced to a wafer being bonded. In certain implementations, a securing mechanism can be configured to reduce the likelihood of such particles and debris being introduced to the wafer.
193 HORIZONTAL ADJUSTING PART AND SUBSTRATE JOINING APPARATUS INCLUDING SAME PCT/KR2011003199 2011-04-29 WO2011159021A3 2012-02-23 LEE JIN HWAN
According to the present invention, a horizontal adjusting part comprises: a deformation part which is able to be elastically deformed; a first connection part which has an internal space, is disposed at an upper side of the deformation part, and is coupled with the deformation part; and a second connection part which is disposed at a lower side of the deformation part and is coupled with the deformation part, wherein an upper part of the first connection part is connected with a first driving shaft which is able to move up and down, and a lower part of the second connection part is connected with a second driving shaft which is able to move up and down and has one end connected with an object to be horizontally adjusted. Therefore, according to the embodiments of the present invention, the deformation part is elastically deformed depending on an inclined direction of a substrate support plate, so that it is possible to easily adjust the substrate horizontally. Thus, when applying pressure to a laminated upper and a laminated lower substrate to bond the upper substrate and the lower substrate; it is possible to transfer a uniform weight to the entire upper substrate and lower substrate.
194 IMPROVED DEBONDING EQUIPMENT AND METHODS FOR DEBONDING TEMPORARY BONDED WAFERS PCT/US2011032607 2011-04-15 WO2011130586A2 2011-10-20 GEORGE GREGORY
A debonder apparatus for debonding a temporary bonded wafer pair includes a chuck assembly, a flex plate assembly, a contact roller and a resistance roller. The chuck assembly includes a chuck and a first wafer holder configured to hold a first wafer of the temporary bonded wafer pair in contact with a top surface of the chuck. The flex plate assembly includes a flex plate and a second wafer holder configured to hold a second wafer of the temporary bonded wafer pair in contact with a first surface of the flex plate. The flex plate is configured to be placed above the top surface of the chuck. The contact roller is arranged adjacent to a first edge of the chuck and includes means for pushing and lifting up a first edge of the flex plate. The resistance roller includes means for traversing horizontally over the flex plate and means for applying a downward force upon the flex plate. The contact roller pushes and lifts up the first edge of the flex plate while the resistance roller simultaneously applies the downward force upon the flex plate and traverses horizontally away from the first edge of the flex plate and thereby the temporary bonded wafer pair delaminates along a release layer and the first and second wafers are separated from each other.
195 LAYERED BODY AND METHOD FOR MANUFACTURING THIN SUBSTRATE USING THE LAYERED BODY PCT/US2009053999 2009-08-17 WO2010025047A3 2010-12-16 LARSON ERIC G; WEBB RICHARD J; KROPP MICHAEL A
Provided is a layered body (1) including a substrate (2) to be ground and a support, (5) where the substrate may be ground to a very small (thin) thickness and can then be separated from the support without damaging the substrate. One embodiment is a layered body including a substrate to be ground, a joining layer (3) having a curable acrylate polymer and a curable acrylate adhesion modifying agent in contact with the substrate to be ground, a photothermal conversion layer (4) having a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the layered body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.
196 HIGH-THROUGHPUT BOND TOOL PCT/US2006001560 2006-01-18 WO2006078631A2 2006-07-27 JOHNSON BRAD
A substrate bonding apparatus comprises a platen and a press. The press is movable relative to the platen for pressing at least one substrate stack between the press and platen. In one embodiment, a consumable compliant member is disposed between the press and the platen. In another embodiment, the apparatus further comprises a substrate carrier adapted for holding and carrying more than one substrate stack in and out of the apparatus. A method for bonding substrates is also described.
197 METAL-CERAMIC MATERIALS PCT/US2005046536 2005-12-22 WO2006078411A2 2006-07-27 LEIGHTON KATHERINE; GARNIER JOHN; ALESHIRE EDGAR
A composite material that includes a ceramic with or without a fiber and a metal with the metal being magnesium, wherein the magnesium infiltrates the ceramic to form a continuous matrix, encapsulates the ceramic, or both infiltrates and encapsulates the ceramic or encapsulates the ceramic and fiber.
198 LAMINATE BODY AND CORRESPONDING METHODS AND APPARATUS PCT/US0317236 2003-06-02 WO2004006296A3 2005-04-07 NODA KAZUKI; IWASAWA MASARU
Provided is a laminated body (1) comprising a substrate (2) to be ground and a support (5), where the substrate (2) is ground to a very small thickness and can then be separated from the support (5) without damaging the substrate (2). One embodiment of the present invention is a laminated body (1) comprising a substrate (2) to be ground, a joining layer (3) in contact with the substrate (2) to be ground, a photothermal conversion layer (4) comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support (5). After grinding the substrate surface which is opposite that in contact with the joining layer (3), the laminated body (1) is irradiated through the light transmitting support (5) and the photothermal conversion layer (4) decomposes to separate the substrate (2) and the light transmitting support (5).
199 LAMINATED BODY WITH SUBSTRATE TO BE THINNED AND CORRESPONDING METHOD OF MANUFACTURE EP03762984.7 2003-06-02 EP1550156B1 2018-12-05 NODA, Kazuki; IWASAWA, Masaru
Provided is a laminated body comprising a substrate to be ground and a support, where the substrate is ground to a very small thickness and can then be separated from the support without damaging the substrate. One embodiment of the present invention is a laminated body comprising a substrate to be ground, a joining layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.
200 VORRICHTUNG UND VERFAHREN ZUM BONDEN VON SUBSTRATEN EP18180799.1 2013-05-29 EP3404699A1 2018-11-21 WAGENLEITNER, Thomas; WIMPLINGER, Markus; Lindner, Friedrich Paul; Plach, Thomas; KURZ, Florian

Die vorliegende Erfindung betrifft ein Verfahren zum Bonden eines ersten Substrats (3) mit einem zweiten Substrat (8) an Kontaktflächen (3k, 8k) der Substrate (3, 8) mit folgenden Schritten, insbesondere folgendem Ablauf:

- Aufnahme des ersten Substrats (3) an einer ersten Aufnahmefläche (2o) einer ersten Aufnahmeeinrichtung (1) und Aufnahme des zweiten Substrats (8) an einer zweiten Aufnahmefläche (2o') einer zweiten Aufnahmeeinrichtung (4),

- Kontaktierung der Kontaktflächen (3k, 8k) an einer Bondinitiierungsstelle (20),

- Bonden des ersten Substrats (3) mit dem zweiten Substrat (8) entlang einer von der Bondinitiierungsstelle (20) zu Seitenrändern (3s, 8s) der Substrate (3, 8) verlaufenden Bondwelle,

dadurch gekennzeichnet, dass

das erste Substrat (3) und/oder das zweite Substrat (8) zur Ausrichtung der Kontaktflächen (3k, 8k) außerhalb der Bondinitiierungsstelle (20) vor und/oder während des Bondens verformt sind/werden.

Weiterhin betrifft die Erfindung eine korrespondierende Vorrichtung.

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