| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 21 | 전압 클램프 | KR1020117008914 | 2009-09-16 | KR1020110059885A | 2011-06-07 | 엘러식,윌리엄에프. |
| 활성 과전압 클램프 시스템은 입력 전압에 응답하여 제 1 전류를 제공하는 적어도 하나의 과전압 검출기를 포함한다. 또한, 시스템은 제 2 전류를 제공하는 레플리카 과전압 회로 및 차동 전류를 생성하기 위해 제 1 전류로부터 제 2 전류를 차감하는 회로를 포함한다. 또한, 시스템은 차동 전류에 응답하여 활성화되는 차동 클램프를 포함한다. 차동 클램프는 목표 전압 이상 입력 전압이 증가하는 것을 방지한다.
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| 22 | 주신호통로와 하이패스필터특성의 보조적인 신호통로를 가지는 노이즈 감소회로 | KR1019910009841 | 1991-06-14 | KR1019940000262B1 | 1994-01-12 | 정덕영; 구승엽 |
| The circuit comprises a main signal path and auxiliary signal path having a high-pass filter characteristic. The circuit may be used as a compression circuit or an expansion circuit in conjunction with a transmitter or a receiver, respectively. The auxiliary signal path includes a voltage dividing circuit, a voltage-to-circuit converting circuit, a differential amplifier, and a voltage buffer connected between an input terminal and an operational amplifier. The main signal path is constituted by a resistance connected between the input terminal and the operational amplifier. | ||||||
| 23 | RADIO FREQUENCY POWER AMPLIFIER AND CORRESPONDING METHOD | PCT/US2006009119 | 2006-03-14 | WO2006104685A3 | 2007-12-21 | SNELGROVE WILLIAM MARTIN; MEKECHUK KELLY; KELLY DAVID; WILSON RICHARD |
| A radio frequency power amplifier and corresponding methods are arranged and configured to drive or provide a radio frequency signal to a resonant load. The amplifier includes a radio frequency switching stage with an output that is coupled to a resonant circuit and configured to provide an output signal with amplitude modulation corresponding to amplitude modulation of an input signal when powered from a fixed voltage power supply and a feedback control system coupled to the input signal and the output signal. The feedback control system includes a sequencer configured to provide a sequencer output that is used to drive the radio frequency switching stage, where the sequencer output has an OFF state that begins at a variable time corresponding to the input and output signal. | ||||||
| 24 | Electronic device comprising RF-LDMOS transistor having improved ruggedness | EP12167901.3 | 2012-05-14 | EP2665187B1 | 2016-07-20 | De Boet, Johannes Adrianus Maria |
| The invention relates to an electronic device comprising an RF-LDMOS transistor (1) and a protection circuit (2) for the RF-LDMOS transistor. The protection circuit (2) comprises: i) an input terminal (Ni) coupled to a drain terminal (Drn) of the RF-LDMOS transistor (1); ii) a clipping node (Nc); iii) a clipping circuit (3) coupled to the clipping node (Nc) for substantially keeping the voltage on the clipping node (Nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (Drn) and lower than a trigger voltage of a parasitic bipolar transistor that is inherently present in the RF-LDMOS transistor; iv) a capacitance (Ct) coupled between the clipping node (Nc) and a further reference voltage terminal (Gnd), and v) a rectifying element (D1, D2) connected with its anode terminal to the input terminal (Ni) and with its cathode terminal to the clipping node (Nc). The invention provides an RF-LDMOS transistor having an improved RF ruggedness, while not, or at least to a much lesser extent, compromising the RF performance of the RF-LDMOS transistor. | ||||||
| 25 | AUDIO SIGNAL AMPLITUDE SUPPRESSION DEVICE | EP14811383.0 | 2014-03-26 | EP3010146A1 | 2016-04-20 | OSHIMA, Kenichi |
When, in conventional sound systems, signals of sounds collected by a microphone are amplified and the amplified signals are applied to an ear by an earphone and a headphone, too loud sounds and environmental noises are unpleasant, and the intelligibility of words are poor. Hence, such problems are to be addressed. In addition, downsizing and performance improvement for sound apparatuses are to be accomplished. A signal having undergone an amplitude limitation with reference to an output potential of a high cut filter 17 which is an output by a low cut filter 12 in a high frequency band and inverted by an inverter 14 is added with, by an adder 15, an output signal from the high cut filter 17, and an addition signal is output. |
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| 26 | High-linearity signal-processing amplifier | EP12157997.3 | 2012-03-02 | EP2498052A3 | 2014-08-06 | Bingel, Thomas J.; Smith, Douglas E.; Sanders, Steven J.; Tran Vo, Deanne; Ross, Craig G.; Mead, Derek |
A clamp-point active circuit is provided. The clamp-point active circuit includes a rate amplifier configured to receive an output from a device transitioning between at least two levels. The clamp-point active circuit has at least one switching device configured to receive an output from the rate amplifier. The at least one switching device is in at least one respective feedback loop of the rate amplifier. A switching of the at least one switching device causes the rate amplifier to amplify with high linearity in a desired operating range and to clamp outputs received from the transitioning device that are outside the desired operating range to a fixed level.
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| 27 | Electronic device comprising RF-LDMOS transistor having improved ruggedness | EP12167901.3 | 2012-05-14 | EP2665187A1 | 2013-11-20 | De Boet, Johannes Adrianus Maria |
The invention relates to an electronic device comprising an RF-LDMOS transistor (1) and a protection circuit (2) for the RF-LDMOS transistor. The protection circuit (2) comprises: i) an input terminal (Ni) coupled to a drain terminal (Drn) of the RF-LDMOS transistor (1); ii) a clipping node (Nc); iii) a clipping circuit (3) coupled to the clipping node (Nc) for substantially keeping the voltage on the clipping node (Nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (Drn) and lower than a trigger voltage of a parasitic bipolar transistor that is inherently present in the RF-LDMOS transistor; iv) a capacitance (Ct) coupled between the clipping node (Nc) and a further reference voltage terminal (Gnd), and v) a rectifying element (D1, D2) connected with its anode terminal to the input terminal (Ni) and with its cathode terminal to the clipping node (Nc). The invention provides an RF-LDMOS transistor having an improved RF ruggedness, while not, or at least to a much lesser extent, compromising the RF performance of the RF-LDMOS transistor.
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| 28 | POWER AMPLIFIER SATURATION DETECTION | EP09829559 | 2009-10-26 | EP2351211A4 | 2012-04-04 | ANDRYS PAUL R; SHIE TERRY J; GERARD MICHAEL L |
| In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation. | ||||||
| 29 | Vorrichtung und Verfahren zum Begrenzen von Störamplituden | EP06010275.3 | 2006-05-18 | EP1753131B1 | 2012-01-25 | Valten, Thomas; Schmidt, Jürgen |
| 30 | VOLTAGE CLAMP | EP09792615.8 | 2009-09-16 | EP2351210A1 | 2011-08-03 | ELLERSICK, William F. |
| An active over-voltage clamp system includes at least one over-voltage detector that is responsive to an input voltage and provides a first current. The system also includes a replica over-voltage circuit that provides a second current, and circuitry subtracting the second current from the first current to produce a difference current. The system further includes a differential clamp activated in response to the difference current. The differential clamp prevents the input voltage from increasing beyond a target voltage. | ||||||
| 31 | LIMITER CIRCUIT | EP08765356.4 | 2008-06-09 | EP2296271A1 | 2011-03-16 | FURUMIYA, Tetsuo; OHI, Junichi |
The limiter circuit of this invention is a limiter circuit which, by switching action of a pair of transistors, allows passage of only signal voltage components of an input signal voltage included in ranges of an upper limit signal voltage and a lower limit signal voltage. With this construction, the pair of transistors carry out comparisons between the input signal voltage and threshold signal voltages and line switching at the same time. Therefore, there is no influence of propagation delay speed, and no switching noise occurs at times of line switching. Since diodes are not used, a high-speed limiter circuit can be manufactured. |
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| 32 | Limiteur de puissance pour radar | EP03104376.3 | 2003-11-26 | EP1431772B1 | 2007-08-29 | TOLANT, Clément; EUDELINE, Philippe; DURIEUX, Franck; STANISLAWIAK, Michel |
| 33 | Audio amplifier with output power limiter | EP01401414.6 | 2001-05-31 | EP1263133A1 | 2002-12-04 | Lin, Jun Hui |
The amplifier comprises a power supply (12), a current sensing element (13) for sensing a current in the current path of the power supply, a detecting circuit (14) responsive to the current sensing element, and voltage reducing means (2-6) for reducing the signal amplitude of at least one of the audio signals in response to the detection circuit. The detecting circuit (14) comprises in a preferred embodiment a threshold circuit, and when the current in the current path of the power supply (12) is above a predefined threshold, the detection circuit together with the voltage reducing means reduce at least the signal amplitude of one of the audio channels. The current sensing element (13) is for example a current sensing resistor and the detecting circuit (14) is a voltage detection circuit in parallel to this resistor. The voltage reducing means (2-6) comprise advantageously two diodes for each channel, via which a positive and a negative voltage limit is applied to the signal path of the audio signals. |
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| 34 | DISPLAY DRIVER APPARATUS | EP97952381.8 | 1997-12-12 | EP1046282A1 | 2000-10-25 | WHITE, Charles, Michael; LAGONI, William, Adamson |
| An emitter follower amplifier is coupled between the output of a high voltage video amplifier and the cathode of a kinescope for reducing the effective capacitance presented to the video amplifier that is attributable to the kinescope cathode, socket, spark gaps, and related stray capacitances. A secondary undesired capacitance loading of the video amplifier is effectively reduced by regulating the collector-emitter voltages of the emitter follower output transistors at substantially constant values thereby improving parameters such as slew rate and bandwidth of the overall video display system. Nonlinear circuitry in the follower circuit facilitates accurate AKB current sensing and provides simplification of the voltage regulation circuitry. White limiting circuitry is included within the video amplifier for reducing excess peak white drive that results in objectionable smears. Black limiting circuitry within the video amplifier is also provided to prevent the collapse of the collector-emitter voltage of the push-pull follower output transistor. The heat sink capacitance of the video amplifier output transistor is screened out via bootstrapping. | ||||||
| 35 | Limiteur en courant et récepteur optique en faisant application | EP89123958.4 | 1989-12-27 | EP0377205B1 | 1994-08-31 | Gauthier, Claude; Balland, Guy |
| 36 | Integrierte Begrenzerschaltung für Wechselspannungen | EP90202824.0 | 1990-10-23 | EP0425047A3 | 1992-01-02 | Bockelmann, Gerhard-Jürgen |
Integrierte Begrenzerschaltung für Wechselspannungen mit gegensinnig in Serie geschalteten Zenerdioden (TZ1, TZ2). |
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| 37 | DIODE CIRCUIT FLICKER-NOISE REDUCTION | EP89912262.0 | 1989-11-02 | EP0441836A1 | 1991-08-21 | HAWKES, Henry, William |
| Circuit à diode, dans lequel le bruit de scintillation que produit la diode est réduit, comprenant une diode (D1) reliée en séries à une résistance (R2) et un condensateur en dérivation (C1) qui est parallèle à la résistance. Dans l'un des modes de réalisation, le côté de la diode qui est éloigné de ladite résistance (R2) est connecté à une entrée d'un amplificateur de différentiel en courant continu à anode négative (A1) par le biais d'un filtre passe-bas (L1, C2). La sortie de l'amplificateur est renvoyée de manière négative à la jonction de la diode (D1) et de la résistance (R2) de sorte que cette dernière fait office de charge d'amplificateur. On applique à l'autre sortie de l'amplificateur une tension de commande d'une intensité telle qu'on obtient la polarisation voulue de la diode. On peut varier ce modèle fondamental de circuit de diodes de manière à l'adapter pour diverses autres fonctions, telles que la limitation de l'amplitude, la commande de fréquence et la modulation. | ||||||
| 38 | Integrierte Begrenzerschaltung für Wechselspannungen | EP90202824.0 | 1990-10-23 | EP0425047A2 | 1991-05-02 | Bockelmann, Gerhard-Jürgen |
Integrierte Begrenzerschaltung für Wechselspannungen mit gegensinnig in Serie geschalteten Zenerdioden (TZ1, TZ2). |
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| 39 | Limiteur en courant et récepteur optique en faisant application | EP89123958.4 | 1989-12-27 | EP0377205A1 | 1990-07-11 | Gauthier, Claude; Balland, Guy |
Circuit limiteur de courant recevant un courant d'entrée à composante continue non nulle, dont la valeur se situe dans une gamme de courant étendue et fournissant un courant de sortie limité dont la valeur se situe dans une gamme de courant restreinte. Il comprend l'agencement en série d'un premier élément à conductibilité dissymétrique (D1), suivi d'un deuxième élément à conductibilité dissymétrique (D2), lui-même suivi d'un élément résistif (RP), entre les deux pôles d'une source de tension, tel qu'un courant de polarisation (ip) traverse les deux éléments à conductibilité dissymétrique et les rende conducteurs, le courant d'entrée (i) étant appliqué au point commun des deux éléments à conductibilité dissymétrique (D1, D2) et la sortie de courant limité (i2) étant obtenue au point commun entre le deuxième élément à conductibilité dissymétrique (D2) et l'élément résistif (RP), le sens du courant d'entrée étant tel qu'il se sépare en deux parties (i1, i2), l'une (i2) se soustrayant au courant de polarisation (ip), dans le deuxième élément à conductibilité dissymétrique (D2), tandis que l'autre s'ajoute au courant de polarisation (ip), dans le premier élément à conductibilité dissymétrique (D1), augmentant ainsi la résistance dynamique du deuxième élément à conductibilité dissymétrique et diminuant celle du premier élément à conductibilité dissymétrique, ce qui cause la limitation du courant de sortie (i2). |
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| 40 | Luminance signal limiting device | EP82400031 | 1982-01-08 | EP0057117A3 | 1982-08-25 | Ta Hong, Anh |
