| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 181 | Power amplifier employing thin film ferroelectric phase shift element | JP2005371534 | 2005-12-26 | JP2006191581A | 2006-07-20 | FRATTI ROGER A |
| PROBLEM TO BE SOLVED: To provide a power amplifier which is not disturbed by one or a plurality of problems indicated by the conventional power amplifier and has an operation frequency range wider than the conventional power amplifier. SOLUTION: The amplifier includes a signal splitter operable to receive an input signal and generate at least first and second split signals, a first amplifier adapted to receive the first split signal and to generate a first amplified signal, and a second amplifier adapted to receive the second split signal and to generate a second amplified signal. A combining circuit is adapted to generate an output signal which is a sum of the first amplified signal and the second amplified signal. The amplifier further includes a phase control circuit arranged in a signal path of one of the first and second amplifiers, the phase control circuit comprising at least one thin film ferroelectric element. The amount of phase shift provided by the phase control circuit is selectively variable as a function of a control signal applied thereto. COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 182 | Power synthesis type high-efficiency amplifier | JP2003360639 | 2003-10-21 | JP2005130013A | 2005-05-19 | MARUYAMA HIROSHI; IWASAKI TAKASHI; OGAWA KAZUYOSHI; MIYADERA NOBUO; IKEDA YUKIO; NAKAYAMA MASATOSHI; HORIGUCHI KENICHI |
| PROBLEM TO BE SOLVED: To obtain a power synthesis type high-frequency amplifier, capable of attaining characteristics of high output, high efficiency and high gain, even in a condition in which input/output impedance is not open, when a peak power amplifying transistor is off. SOLUTION: A first branched line 3 and a second branched line 4 are connected in parallel between an input-side power-distributing means 1 and an output-side power-distributing means 2, a carrier power amplifying transistor 5 is connected to the line 3, and a peak power amplifying transistor 7 is connected to the line 4. A first 1/4 wavelength line 18 and a first input-matching circuit 19 are connected in series with the input side of the transistor 5. A first output-matching circuit 20 is connected to the output-side of the transistor 5. A second input-matching circuit 21 is connected to the input-side of the transistor 7. A second output-matching circuit 22 and a second 1/4 wavelength line 23 are connected in series with the output-side of the transistor 7. COPYRIGHT: (C)2005,JPO&NCIPI | ||||||
| 183 | Transmitter having a composite amplifier | JP2002509167 | 2001-06-19 | JP2004503161A | 2004-01-29 | ヘルベルグ， リチャード |
| ドハティ出力回路網（１６）を介して負荷（１４）に接続される主電力増幅器（１０）及び補助電力増幅器（１２）を複合増幅器が有している。 非線形機能（１８）及び交差結合フィルタ（２２）は、補助電力増幅器（１２）の出力電流の非線形な振舞をエミュレートし、そして、そのエミュレーションの結果として生じたエミュレート信号は、前記主増幅器（１０）に対する入力信号から減算される。
【選択図】図１ |
||||||
| 184 | INTEGRATED CMOS TRANSMIT/RECEIVE SWITCH IN A RADIO FREQUENCY DEVICE | PCT/US2015067929 | 2015-12-29 | WO2016109581A3 | 2016-12-08 | JIN YALIN; MOHTA SETU |
| Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die. | ||||||
| 185 | SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE | PCT/US2012020971 | 2012-01-11 | WO2012097085A8 | 2013-08-01 | NATH JAYESH; SHEN YING; MATSUMOTO FRANK; QIN YOUMING; PHAM DAVID C M |
| Various embodiments provide for systems and methods for increased linear output power of a transmitter. An exemplary wireless communications system for transmitting an input signal comprises a predistorter module, a GaN power amplifier, a coupler, and an antenna. The predistorter module is configured to detect existing distortion by comparing the input signal to a feedback signal and generate a correction signal. The predistorter may adaptively adjust its operation to minimize the existing distortion due to GaN power amplifier nonlinear characteristics. The result is that the GaN power amplifier may send a power signal of improved linearity to the antenna. The coupler is configured to sample the amplified signal from the GaN power amplifier to generate the feedback signal. The antenna is configured to transmit the amplified signal. | ||||||
| 186 | POWER AMPLIFIER ARCHITECTURES | PCT/US2009045547 | 2009-05-28 | WO2009151973A2 | 2009-12-17 | DUPUY ALEXANDRE; ALIDIO RAUL; GUMMALLA AJAY; ACHOUR MAHA; LEE CHENG-JUNG; ZHENG CAN |
| Implementations and examples of power amplifier devices, systems and techniques for amplifying RF signals, including power amplifier systems based on Composite Right and Left Handed (CRLH) metamaterial (MTM) structures. | ||||||
| 187 | DOHERTY POWER AMPLIFIER | PCT/KR2007002424 | 2007-05-18 | WO2007142414A8 | 2008-06-05 | YU DAEKYU |
| The present invention relates to a power amplifier; and, more particularly, to a Doherty power amplifier. The power amplifier includes at least one carrier amplifier; at least one peaking amplifier arranged in parallel with the carrier amplifier in such a manner that the carrier amplifier and the peaking amplifier collectively operate as a Doherty amplifier; a plurality of input matching circuits, at least one of which is respectively connected to an input ends of the carrier amplifier and the peaking amplifier; at least one impedance control circuit, each of which is connected to an output end of each carrier amplifier for controlling a load line impedance of the said each carrier amplifier; at least one output matching circuit directly or indirectly connected to output ends of the impedance control circuit and the peaking amplifier; and at least one first delay circuit for matching delays between the carrier amplifier and the peaking amplifier. The present invention provides an improved Doherty power amplifier capable of achieving a further miniaturization and integration while maintaining an advantage in terms of efficiency and linearity of a Doherty power amplifier by employing an improved output and input matching method, and capable of operating more similar to the ideal operation of a Doherty power amplifier by applying an improved input power division method thereto. | ||||||
| 188 | TRAVELLING WAVE AMPLIFIER | PCT/IB2005051264 | 2005-04-19 | WO2005104359A3 | 2006-03-16 | AUVRAY FRANCIS |
| A travelling wave amplifier has two inductive transmission lines (12, 14) with a plurality of amplifier devices connected between them. At least one of the transmission lines (14) further comprises a plurality of delay elements (50), each delay element being provided in series between a respective pair of inductive elements. The delay elements enable the pulse propagation speeds in the two transmission lines to be matched while leaving freedom in the selection of impedance values to provide input and output impedance matching of the amplifier. In this way, even when the individual amplifier devices have unequal input and output impedances, the amplifier can be configured to provide matched input and output impedances as well as matched propagation speeds. | ||||||
| 189 | HIGH IMPEDANCE DIFFERENTIAL INPUT PREAMPLIFIER AND ANTENNA FOR MAGNETIC RESONANCE SYSTEMS | PCT/US2006035578 | 2006-09-11 | WO2007030832A3 | 2009-04-16 | SMITH JOLINDA C; DAX CLIFFORD D; NUNNALLY RAY L |
| Antenna assemblies for magnetic resonance signals comprise a non-resonant loop antenna (102) and a high impedance differential amplifier (124). The amplifier (124) can include first and second high electron mobility transistors (104 and 106) that have gates coupled to an antenna loop that is defined on a rigid substrate (not shown). The non-resonant loop (102) has an effective lenght of les than about 1/lOof a signal to be detected. Arrays of such loops (102) can be defined on the rigid substrate (not shown), and HEMTs (104 and 106) for loops securedto the substrate. | ||||||
| 190 | HIGH EFFECIENCY RF TRANSMITTER SYSTEM USING NON-LINEAR AMPLIFIERS | PCT/IB2006003379 | 2006-05-30 | WO2007029119A8 | 2008-02-14 | BIRAFANE AHMED |
| An RF transmitter with improved efficiency and good linearity decomposes an input AM signal into two signal envelopes with phased modulation at a phase angle ?. The transmitter has three principal embodiments. A first solution uses at least one added RF amplifier for each decomposed signal envelope with one or more amplifiers having a low gain compared to that of a high gain amplifier in another branch for the same signal envelope. A phase angle ?i is determined that corresponds to a switching on two of the 2n + 2 total branches, n = 0, 1, 2,.... A second solution uses the same general schematic architecture as the classic LINC system that requires only two RF amplifiers, but uses a different decomposition because the two RF amplifiers are used in their nonlinear zone. The decomposed signal envelopes can be variable. The amplified output signal allows the combiner to be used at 100% efficiency in major part of signal. The third solution combines the first and second solutions. | ||||||
| 191 | MINATURE BIDIRECTIONAL AMPLIFIER | PCT/US2005015100 | 2005-05-02 | WO2005107398A3 | 2007-04-05 | HE SHIPING; HANG JIE; GE DAVID; JAMAL MOHAMMED N |
| An amplifier device for amplifying RF communication signals compatible with IEEE 802.11 standards (100). An amplifier circuit is housed within a cylindrical metal housing that provides excellent heat dissipation and requires no mounting hardware for installing the device within a communication system (10). The metal housing with an integrated lightning arrestor creates a watertight seal to protect the amplifier circuit from damage when installed outdoors and the amplifier circuit is compatible with both 2.4 GHz and 5.8 GHz frequency applications. | ||||||
| 192 | TRAVELLING WAVE AMPLIFIER | PCT/IB2005051264 | 2005-04-19 | WO2005104359B1 | 2006-06-29 | AUVRAY FRANCIS |
| A travelling wave amplifier has two inductive transmission lines (12, 14) with a plurality of amplifier devices connected between them. At least one of the transmission lines (14) further comprises a plurality of delay elements (50), each delay element being provided in series between a respective pair of inductive elements. The delay elements enable the pulse propagation speeds in the two transmission lines to be matched while leaving freedom in the selection of impedance values to provide input and output impedance matching of the amplifier. In this way, even when the individual amplifier devices have unequal input and output impedances, the amplifier can be configured to provide matched input and output impedances as well as matched propagation speeds. | ||||||
| 193 | Travelling wave amplifier | PCT/IB2005051264 | 2005-04-19 | WO2005104359A8 | 2006-06-01 | AUVRAY FRANCIS |
| A travelling wave amplifier has two inductive transmission lines (12, 14) with a plurality of amplifier devices connected between them. At least one of the transmission lines (14) further comprises a plurality of delay elements (50), each delay element being provided in series between a respective pair of inductive elements. The delay elements enable the pulse propagation speeds in the two transmission lines to be matched while leaving freedom in the selection of impedance values to provide input and output impedance matching of the amplifier. In this way, even when the individual amplifier devices have unequal input and output impedances, the amplifier can be configured to provide matched input and output impedances as well as matched propagation speeds. | ||||||
| 194 | 고효율 전력 증폭기 | KR1020147005400 | 2012-08-29 | KR101802572B1 | 2017-11-28 | 가미야마마사히로; 이시카와료; 혼조가즈히코 |
| 이고효율전력증폭기에는트랜지스터및 출력전력처리회로부가제공된다. 여기서, 트랜지스터는전류또는전압에서기본각 주파수성분을갖는입력전력을증폭하고출력전력을출력한다. 출력전력처리회로부에는출력변조회로부및 출력고조파처리회로부가제공된다. 여기서출력변조회로부는기본각 주파수성분에서임피던스매칭을수행한다. 출력고조파처리회로부는전력출력중에서복수의고조파성분이리액티브전력으로변하도록형성되며, 고조파성분각각은기본각 주파수의정수배인복수의고조파각 주파수를갖는다. 출력고조파처리회로부는복수의고조파성분중 적어도하나에서출력전력의전류및 전압의위상이교차하게하여리액티브전력에대한변화를달성하도록형성된다. | ||||||
| 195 | 위상 검출기를 위한 시스템 및 방법 | KR1020150017127 | 2015-02-04 | KR101672117B1 | 2016-11-03 | 솔롬코발렌틴 |
| 실시예에따르면, 제 1 신호와제 2 신호사이의위상차를검출하는방법은제 1 래치신호를생성하기위해클럭으로서제 2 신호를이용하여제 1 신호의상태를래치하는단계와, 제 2 래치신호를생성하기위해클럭으로서제 1 신호를이용하여제 2 신호의상태를래치하는단계와, 제 1 신호가제 2 신호보다선행하거나후행하는지의표시를생성하기위해제 1 래치신호와제 2 래치신호를합산하는단계를포함한다. | ||||||
| 196 | 튜닝가능 로드라인 | KR1020167019073 | 2014-12-12 | KR1020160099661A | 2016-08-22 | 하디쉬리스토스,아리스토텔레; 프레스티,카로게로다비데; 네자티,바바크 |
| 튜닝가능로드라인이개시된다. 예시적인실시예에서, 장치는, 선택된전력레벨을갖는증폭된신호를출력하도록구성되는증폭기, 및증폭된신호를입력단자에서수신하고그리고제 1 출력단자에서제 1 전력레벨을갖는제 1 출력신호를생성하도록커플링되는제 1 임피던스네트워크를포함한다. 제 1 임피던스네트워크는, 선택된전력레벨을제 1 전력레벨로변환하도록, 증폭된신호를로딩하게구성된다. 장치는또한, 선택적으로제 1 출력신호를수신하고그리고제 2 출력단자에서제 2 전력레벨을갖는제 2 출력신호를생성하도록구성되는제 2 임피던스네트워크를포함한다. 제 2 임피던스네트워크는, 선택된전력레벨을제 2 전력레벨로변환하도록증폭된신호를로딩하기위해, 제 1 임피던스네트워크와결합되게구성된다. | ||||||
| 197 | 무선 주파수 전력 증폭기에 대한 제어기에 관련된 시스템, 회로 및 방법 | KR1020157006506 | 2013-08-14 | KR1020150043459A | 2015-04-22 | 게베예후,네트사넷; 시,잉; 카스나비,레자; 오즈,온더; 펭,징항 |
| 무선주파수(RF) 전력증폭기(PA)를제어하는것에관련된시스템들, 회로들및 방법들이개시되어있다. 일부실시예들에서, PA 제어회로는, PA에제공된베이스전류로부터복제베이스전류를발생시키도록구성된제1 회로를포함할수 있고, 복제베이스전류는베타파라미터에의해스케일링된 PA의컬렉터전류를나타낸다. PA 제어회로는, PA와연관된베이스저항및 온도보상된전압으로부터베타-추적기준전류를발생시키도록구성된제2 회로를더 포함할수 있다. PA 제어회로는, 복제베이스전류및 베타-추적기준전류를수신하고, 베이스드라이버의클램핑노드로의비례전류를발생시키도록구성된전류조종회로를더 포함할수 있다. 일부실시예들에서, 복제베이스전류는램프전류와핑거-감지된전류의전류-모드비교에의해획득될수 있다. | ||||||
| 198 | 증폭장치 | KR1020120039692 | 2012-04-17 | KR1020130064679A | 2013-06-18 | 코우키탄지; 이치로오토베 |
| PURPOSE: An amplification device is provided to reduce manufacturing costs due to increase in process costs and to prevent characteristic degradation. CONSTITUTION: An amplification device includes an input terminal, a first amplifier(102), a second amplifier(104) and a switching unit. The input terminal inputs a high frequency signal. The first amplifier is connected to a high frequency signal output terminal, includes a bipolar transistor and amplifies the high frequency signal inputted from the input terminal. The second amplifier has the maximum output power lower than the first amplifier, includes a bipolar transistor and amplifies the high frequency signal inputted from the input terminal. The switching unit is connected in between the second amplifier and output terminal and selectively outputs the high frequency signal amplified by the second amplifier. | ||||||
| 199 | 증폭기와 집적 회로 | KR1020050133149 | 2005-12-29 | KR101156285B1 | 2012-06-13 | 프라티로저에이 |
| 입력 신호를 수신하여 적어도 제 1 분리 신호 및 제 2 분리 신호를 생성하도록 동작가능한 신호 스플리터(signal splitter)와, 제 1 분리 신호를 수신하여 제 1 증폭 신호를 생성하는 제 1 증폭기와, 제 2 분리 신호를 수신하여 제 2 증폭 신호를 생성하는 제 2 증폭기를 포함한다. 결합 회로는 제 1 증폭 신호와 제 2 증폭 신호의 합산인 출력 신호를 생성한다. 증폭기는 제 1 증폭기와 제 2 증폭기 중의 한 증폭기의 신호 경로에 배치된 위상 제어 회로를 더 포함하고, 이 위상 제어 회로는 적어도 하나의 박막 강유전성 소자를 포함한다. 위상 제어 회로에 의해 제공되는 위상 시프트량은 인가되는 제어 신호의 함수로서 선택적으로 변경될 수 있다. | ||||||
| 200 | 멀티 칩 모듈 구조를 갖는 고주파 회로 | KR1020100047270 | 2010-05-20 | KR101148351B1 | 2012-05-21 | 다까기가즈따까 |
| 복수의 개별 트랜지스터(FET1 내지 FET3)를 각각 형성하는 반도체 기판(16
1 내지 16
3 )과, 복수의 캐패시터(C1 내지 C4)를 각각 형성하는 제1 유전체 기판(14
1 내지 14
4 )과, 복수의 정합 회로를 각각 형성하는 제2 유전체 기판(18
1 , 18
2 )을 구비하고, 복수의 개별 트랜지스터(FET1 내지 FET3)는 직렬 접속된 것을 특징으로 하는 멀티 칩 모듈 구조를 갖는 고주파 회로(30)에 관한 것이다. 마이크로파?밀리미터파에 있어서의 집적 회로 치수를 소형화하고, 저렴한 멀티 칩 모듈 구조를 갖는 고주파 회로를 제공한다.
|
||||||
QQ群二维码
意见反馈
意见反馈