| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 改善线性度和频带的放大器电路 | CN200610109655.8 | 2006-08-15 | CN100547909C | 2009-10-07 | 金兑昱; 金本冀; 李贵鲁 |
| 一种改善线性度和频带的放大器电路，包括一放大模块、一反馈模块和一输出模块。所述的放大模块包括一主晶体管、一辅助晶体管、一第一电容、一第二电容、一主晶体管偏置单元和辅助晶体管偏置单元。所述的主晶体管偏置单元包括一第一偏置电阻。所述的辅助晶体管偏置单元包括一第二偏置电阻。所述的反馈模块包括第一和第二反馈电阻，且所述的输出模块包括一输出电阻和一输出晶体管。 | ||||||
| 2 | 改善线性度和频带的放大器电路 | CN200610109655.8 | 2006-08-15 | CN1941612A | 2007-04-04 | 金兑昱; 金本冀; 李贵鲁 |
| 一种改善线性度和频带的放大器电路，包括一放大模块、一反馈模块和一输出模块。所述的放大模块包括一主晶体管、一辅助晶体管、一第一电容、一第二电容、一主晶体管偏置单元和辅助晶体管偏置单元。所述的主晶体管偏置单元包括一第一偏置电阻。所述的辅助晶体管偏置单元包括一第二偏置电阻。所述的反馈模块包括第一和第二反馈电阻，且所述的输出模块包括一输出电阻和一输出晶体管。 | ||||||
| 3 | 电荷或微粒检测装置及检测方法 | CN03802506.X | 2003-01-20 | CN1630979A | 2005-06-22 | 皮尔·贾伦 |
| 一个可以检测带电粒子和/或者电磁辐射粒子的检测装置有一个传感装置12以及一个放大电路14，M1，M4。传感装置给放大器14，M1，M4的输入节点Vin提供一个传感信号，这样使得放大器输出节点输出电压Vout的幅值跟着变化。为了增加放大器电路的环路增益，负反馈装置T1，M2响应输出节点的变化并调整反馈强度。一个电流反射镜T2，T3；M3、M6复位输入节点到其起始值。本发明公开了单个及集成的检测装置。 | ||||||
| 4 | 低压低功率类A/B输出级 | CN200610163074.2 | 2006-11-30 | CN1976218B | 2011-10-12 | 李展陞 |
| 一种CMOS类A/B输出级，由于采用了输出驱动晶体管的次阈值偏置，所以提供了高运行速度、低电源电压需求以及低静态电流吸取的优势。所述输出级的体系结构使其尤其适用于诸如便携式仪器、烟雾探测器、传感器等等的对功率要求较高的应用中的运算放大器。 | ||||||
| 5 | 低压低功率类A/B输出级 | CN200610163074.2 | 2006-11-30 | CN1976218A | 2007-06-06 | 李展陞 |
| 一种CMOS类A/B输出级，由于采用了输出驱动晶体管的次阈值偏置，所以提供了高运行速度、低电源电压需求以及低静态电流吸取的优势。所述输出级的体系结构使其尤其适用于诸如便携式仪器、烟雾探测器、传感器等等的对功率要求较高的应用中的运算放大器。 | ||||||
| 6 | Low-voltage, low-power ab class output stage | JP2006315055 | 2006-11-22 | JP4850669B2 | 2012-01-11 | チン シン リ |
| 7 | Amplifier circuit improved in linearity and frequency band | JP2006221434 | 2006-08-15 | JP2007053762A | 2007-03-01 | KIM TAE WOOK; KIM BONKEE; LEE KWYRO |
| PROBLEM TO BE SOLVED: To provide an amplifier circuit which is improved in linearity and used for a wide frequency band. SOLUTION: The amplifier circuit comprises an amplification block comprising a main transistor comprising first, second and third terminals, wherein a current flow from the second terminal to the third terminal changes according to a voltage applied to the first terminal, an auxiliary transistor comprising fourth, fifth and sixth terminals, wherein a current flow from the fifth terminal to the sixth terminal changes according to a voltage applied to the fourth terminal, a main transistor bias unit applying a bias to make the main transistor operate in a saturation region, and an auxiliary transistor bias unit applying a bias to make the auxiliary transistor operate in a sub-threshold region, wherein the second and fifth terminals are electrically connected to each other and the first and fourth terminals are electrically connected to an input port, a first feedback block electrically connected to the third terminal, and a second feedback block electrically connected to the sixth terminal. COPYRIGHT: (C)2007,JPO&INPIT | ||||||
| 8 | Integrated active circuit | JP9531776 | 1976-08-10 | JPS5222855A | 1977-02-21 | JIYAN FUERURATO |
| 9 | JPS50143459A - | JP4272475 | 1975-04-08 | JPS50143459A | 1975-11-18 | |
| 10 | ULTRA COMPACT MULTI-BAND TRANSMITTER WITH ROBUST AM-PM DISTORTION SELF-SUPPRESSION TECHNIQUES | US15877879 | 2018-01-23 | US20180278216A1 | 2018-09-27 | Jong Seok Park; Yanjie J. Wang; Stefano Pellerano; Christopher D. Hull |
| A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation. | ||||||
| 11 | Controlling a power amplification stage of an audio signal amplifier | US15437587 | 2017-02-21 | US10014840B2 | 2018-07-03 | Andrew Paul George Randall |
| An audio reproduction apparatus is shown and includes an amplifier with a power amplification stage having transistors in a push-pull arrangement. A bias generator biases the transistors with a standing current. A processor receives a data stream comprising digital samples of an analog audio signal and analyzes the peak level of each group. It then determines the appropriate standing currents to maintain Class A operation of the power amplification stage given the peak levels of each of the groups. A digital to analog converter produces an analog input signal for the input stage of the amplifier from the data stream. A feedforward path between the processor and the bias generator allows the standing current to be adjusted prior to the arrival of the analog input signal in the power amplification stage. | ||||||
| 12 | ULTRA COMPACT MULTI-BAND TRANSMITTER WITH ROBUST AM-PM DISTORTION SELF-SUPPRESSION TECHNIQUES | US15068179 | 2016-03-11 | US20170264250A1 | 2017-09-14 | Jong Seok Park; Yanjie J. Wang; Stefano Pellerano; Christopher D. Hull |
| A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation. | ||||||
| 13 | AMPLIFIER CIRCUIT IMPROVED IN LINEARITY AND FREQUENCY BAND | US11464660 | 2006-08-15 | US20070200631A1 | 2007-08-30 | Tae Kim; Bonkee Kim; Kwyro Lee |
| An amplifier circuit improved in linearity and frequency band comprises an amplification block, a feedback block and an output block. The amplification block comprises a main transistor, an auxiliary transistor, a first capacitor, a second capacitor, a main transistor bias unit, and an auxiliary transistor bias unit. The main transistor bias unit comprises a first bias resistor. The auxiliary transistor bias unit comprises a second bias resistor. The feedback block comprises first and second feedback resistors, and the output block comprises an output resistor and an output transistor. | ||||||
| 14 | Charge or particle sensing | US10500794 | 2003-01-20 | US07183555B2 | 2007-02-27 | Pierre Jarron |
| A sensing arrangement for sensing charged particles and/or quanta of electromagnetic radiation has a sensor device (12) and amplifier circuitry (14). The sensor device (12) provides a sensor signal to an imput mode (vin) of the amplifier (14) to cause the level at the amplifier output mode (vout) to change. A negative feetback device (T1) responds to the change in level of the output node (Vour) to vary the feedback effect to increase the loop again of said amplifier circuitry (14). A current mirror (T2,T3) resets the input node (vin) to its initial level. Single particle and integrating sensor arrangements are disclosed. | ||||||
| 15 | Charge or particle sensing | US10500794 | 2003-01-20 | US20050104003A1 | 2005-05-19 | Pierre Jarron |
| A sensing arrangement for sensing charged particles and/or quanta of elektromagnetic radiation has a sensor device (12) and amplifier circuitry (14). The sensor device (12) provides a sensor signal to an imput mode (vin) of the amplifier (14) to cause the level at the amplifier output mode (vout) to change. A negative feetback device (T1) responds to the change in level of the output node (Vour) to vary the feedback effect to increase the loop again of said amplifier circuitry (14). A current mirror (T2,T3) resets the input node (vin) to its initil level. Single particle and integrating sensor arrangements are disclosed. | ||||||
| 16 | INPUT STAGE OF AN OPERATIONAL AMPLIFIER | US09756259 | 2001-01-08 | US20020180527A1 | 2002-12-05 | Vadim V. Ivanov; Shilong Zhang |
| An input to a rail-to-rail, FET, operational amplifier having a transconductance that is constant throughout the operating range of the operational amplifier is presented. The input of an operational amplifier typically includes an input stage, a current source and a current transfer circuit, wherein the input stage comprises both N-type transistors and P-type transistors. The present application discloses the use of a duplicate of those elements: a proportional input stage, a proportional current source, and a proportional current transfer circuit, which together are used to emulate the operation of the input stage. By monitoring these proportional duplicates, one can determine when both input pairs are operating. When both input pairs are operating, a minimum selector circuit interfaces with the current transfer circuit to reduce the current supplying one of the input pair transistors, thus reducing the overall transconductance of the circuit. | ||||||
| 17 | Input stag of an operational amplifier | US09756259 | 2001-01-08 | US06462619B1 | 2002-10-08 | Vadim V. Ivanov; Shilong Zhang |
| An input to a rail-to-rail, FET, operational amplifier having a transconductance that is constant throughout the operating range of the operational amplifier is presented. The input of an operational amplifier typically includes an input stage, a current source and a current transfer circuit, wherein the input stage comprises both N-type transistors and P-type transistors. The present application discloses the use of a duplicate of those elements: a proportional input stage, a proportional current source, and a proportional current transfer circuit, which together are used to emulate the operation of the input stage. By monitoring these proportional duplicates, one can determine when both input pairs are operating. When both input pairs are operating, a minimum selector circuit interfaces with the current transfer circuit to reduce the current supplying one of the input pair transistors, thus reducing the overall transconductance of the circuit. | ||||||
| 18 | Biasing and sizing of the MOS transistor in weak inversion for low voltage applications | US292359 | 1999-04-15 | US6157259A | 2000-12-05 | Uday Dasgupta |
| Methods and circuits are disclosed for low voltage (1.5 Volt and below) CMOS circuits, offering good transconductance and current driving capabilities. These goals are achieved by biasing CMOS transistors in the weak inversion region, by utilizing multiple unit-sized transistors with a fixed gate width to gate length ratio, and by maintaining a uniform threshold voltage of each unit-sized transistor. The required transistor size is obtained by parallel connection of several unit-sized transistors, such that `n` unit sized transistors carry the required current of `n` units. The methods and circuits disclosed eliminate deviation of the output current of current mirrors caused by threshold voltage mismatch. Disclosed are a current mirror and two typical amplifiers as examples of weak inversion design. | ||||||
| 19 | Linear amplifier | US627403 | 1996-04-04 | US5699014A | 1997-12-16 | Paul A. Haefner; William J. Linder |
| A low-noise, low-power complementary metal-oxide-semiconductor (CMOS) integrated circuit common source differential amplifier is disclosed which is capable of amplifying low amplitude cardiac signals such as those produced by atrial depolarization of the heart. The amplifier has a pair of large area p-channel input field-effect transistors (FETs) biased in weak inversion. The amplifier also has active load FETs biased in the nonsaturation (linear) region by means of a varying gate terminal voltage applied by a dynamic bias circuit. The gate terminal voltage is varied to match the temperature dependence of the output conductance of the load FETs to the temperature dependence of the transconductance of the input FETs. The gate terminal voltage also sets a dc bias point which uses the nonlinearity in the load FET output conductance to cancel nonlinearity in the input FET transconductance. | ||||||
| 20 | Pre-amplifier in focal plane detector array | US558099 | 1983-12-05 | US4555623A | 1985-11-26 | Walter F. Bridgewater; Robert E. De Caro; Roger Larson; Llewellyn E. Wall |
| A pre-amplifier located "at the focal plane" of a detector array is disclosed which uses MOSFET transistors operated in the "weak inversion" region to provide operational amplifier performance. The dimensions of certain of the transistors are designed to minimize noise amplification. Feedback resistance for the operational amplifier is provided by switched capacitance using MOSFET transistors as switches, thereby permitting adjustment of the amplifier gain. Implanted and non-implanted MOSFET transistors are used in the differential amplifier in such a way as to avoid the need for a biasing network. | ||||||
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