| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | Method and apparatus for fabrication of micro-structures using non-planar, exposure beam lithography | EP92101182.1 | 1992-01-24 | EP0497227A3 | 1992-09-02 | Jacobsen, Stephen C.; Wells, David L.; Davis, Clark; Wood, John E. |
Apparatus for non-planar treatment of a workpiece utilizing exposure beam lithography includes a vacuum chamber (4), an exposure beam generator such as an electron beam generator (8) disposed in the chamber for directing a beam (12) towards a work location (16), a chuck (44) disposed in the chamber for holding and positioning the workpiece (40) at the work location, a rotary motorized stage (48) disposed in the chamber and responsive to first control signals for selectively rotating the chuck, and thus the workpiece, to thereby expose different areas of the workpiece to the beam, and a linear motorized stage (56) disposed in the chamber on which the rotary stage is mounted, said linear motor being responsive to second control signals for selectively moving the rotary stage and thus the chuck and workpiece in a linear direction which is generally parallel with the axis of rotation of the rotary stage. The workpiece is thus exposed over additional areas by operation of the linear stage. A controller supplies first and second control signals to the rotary stage and linear stage respectively to selectively effect the operation thereof. |
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| 122 | Heat responsive memory metal actuator | EP91810418.3 | 1991-06-04 | EP0461075A1 | 1991-12-11 | van Roermund, Ton; Besselink, Peter, Ir. |
An actuator which includes a memory metal element, a substantially constant force counteracting spring, and an actuated element. The memory metal transforms from a martensite structure to an austenite structure at a known temperature. The martensite structure is more easily deformed than the austenite structure. The force applied by the counteracting spring is sufficient to deform the martensite structure throughout the transformation temperature range but insufficient to deform the austenite structure such that at least a portion of the memory metal strip undergoes a predetermined stroke in response to the transformation of the memory metal strip between the martensite and austenite states. The actuated element is connected to the memory metal element to move therewith. |
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| 123 | Force sensing means | EP84109111.9 | 1984-08-01 | EP0133543B1 | 1990-12-05 | Nakano, Yoshiyuki; Fujie, Masakatsu; Honma, Kazuo; Iwamoto, Taro; Kamejima, Kohji; Kojima, Yoshio; Hosoda, Yuji |
| 124 | Stellelement mit vorgeformtem Element aus einem beheizbaren Memorymetall | EP89100756.9 | 1989-01-18 | EP0326851A3 | 1990-01-31 | Feldmann, Wolfgang; Reiss, Hans-Georg; Remmen, Thomas |
Es wird ein Stellelement mit vorgeformtem Element aus einem beheizbarem Memorymetall dargestellt, das mit Hilfe des Memorymetall-Elements die Bewegung zwischen zwei Zuständen originalgetreu nachbildet. |
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| 125 | Stellelement mit vorgeformtem Element aus einem beheizbaren Memorymetall | EP89100756.9 | 1989-01-18 | EP0326851A2 | 1989-08-09 | Feldmann, Wolfgang; Reiss, Hans-Georg; Remmen, Thomas |
Es wird ein Stellelement mit vorgeformtem Element aus einem beheizbarem Memorymetall dargestellt, das mit Hilfe des Memorymetall-Elements die Bewegung zwischen zwei Zuständen originalgetreu nachbildet. |
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| 126 | Dispositif de commande électrique du déplacement d'un élément entre deux positions prédéterminées | EP86402735.4 | 1986-12-09 | EP0228328A1 | 1987-07-08 | Bouvot, Jean-François |
L'invention concerne un dispositif de commande électrique du déplacement d'un élément (22) mobile entre deux positions prédéterminées, cet élément (22) étant associé à un ou deux moyens de rappel (18, 30) électriquement conducteurs à mémoire de forme qui n'exercent sensiblement aucune force de rappel sur l'élément (22) quand ils ne sont pas parcourus par un courant électrique et qui exercent sur lui une force suffisante pour le déplacer quand ils sont parcourus par un courant électrique, le passage du courant électrique dans l'un ou l'autre moyen de rappel étant commandé par un interrupteur (10). L'invention s'applique notamment à la sélection de fonctions pneumatiques, dans l'industrie automobile. |
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| 127 | Piezoelectric displacing device | EP83305091 | 1983-09-02 | EP0106483A3 | 1987-01-21 | Suda, Yoshiyuki; Yokoyama, Katsunori; Tanuma, Chiaki |
A piezoelectric displacing device includes a plurality of longitudinal effect-type piezoelectric displacing members (31, 32, 33, 34) arranged juxtaposed to each other such that displacement axes thereof are substantially parallel to each other, each of said piezoelectric displacing members (31, 32, 33, 34) converting a voltage applied thereto to a mechanical displacement. Connectors (35, 36, 37) are provided which mechanically connect the piezoelectric displacing members (31, 32, 33, 34) in series with each other and derive a sum of amounts of displacement of the piezoelectric displacing members (31,32,33,34) along the displacement axes thereof to give an amount of displacement of the device. |
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| 128 | Force sensing means | EP84109111.9 | 1984-08-01 | EP0133543A2 | 1985-02-27 | Nakano, Yoshiyuki; Fujie, Masakatsu; Honma, Kazuo; Iwamoto, Taro; Kamejima, Kohji; Kojima, Yoshio; Hosoda, Yuji |
In force sensing means for a driving device which employs a shape memory alloy (6), note is taken of the fact that a force to be generated by the shape memory alloy (6) varies depending upon the temperature or resistance and the displacement of the shape memory alloy (6), and force information on an output of the driving device is detected on the basis of information of the temperature (T) or resistance and the displacement of the shape memory alloy (6). |
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| 129 | Electric travelling support | EP81106229.8 | 1981-08-10 | EP0071666B1 | 1985-02-06 | Binnig, Gerd, Dr.; Nievergelt, Hermann; Rohrer, Heinrich, Dr.; Weibel, Edmund |
| 130 | Displacement generation device | EP84302051.2 | 1984-03-27 | EP0124250A1 | 1984-11-07 | Tanuma, Chiaki |
A displacement generation device includes: a bimorph piezoelectric vibrator (10) for receiving an externally applied drive voltage and for generating a displacement in response to the drive voltage; and a temperature-compensation capacitor element (16) electrically connected in series with the piezoelectric vibrator (10). The capacitor element (16) has a capacitance with a temperature coefficient with the same absolute value but opposite sign to that of the capacitance of the piezoelectric vibrator (10). When the capacitance of the piezoelectric vibrator (10) changes in accordance with a change in the ambient temperature, the capacitor element (16) properly changes the drive voltage supplied to the piezoelectric vibrator (10), thereby compensating for the displacement of the piezoelectric vibrator (10) caused by the change in ambient temperature. |
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| 131 | Electric travelling support | EP81106229.8 | 1981-08-10 | EP0071666A1 | 1983-02-16 | Binnig, Gerd, Dr.; Nievergelt, Hermann; Rohrer, Heinrich, Dr.; Weibel, Edmund |
The travelling support (1) comprises a piezo-electric plate (2) resting on three legs (6) whose bottom surface is insulated from the bench (8) on which the support is to travel, by a dielectric (7). The piezo-electric plate (2) can be caused to contract by means of an actuating voltage applied via sliders (9, 10) to top and bottom electrodes on the plate (2). By applying a voltage to the legs (6), these may be clamped selectively by electrostatic forces effective across the dielectric (7). Appropriate control of the actuating and clamping voltages causes the support (1) to either move in a linear or rotary fashion. The displacements the support can perform per step are in the nanometer range. |
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| 132 | Probe scanning device | JP1947397 | 1997-01-31 | JP3468655B2 | 2003-11-17 | 正敏 安武 |
| 133 | Shape-memory actuator | JP21014396 | 1996-08-08 | JPH09113658A | 1997-05-02 | MATSUTEIASU PIININGU |
| PROBLEM TO BE SOLVED: To execute a previously specifiable operation with a large operating force and stroke by winding a thin heatable wire (control member) of shape memory alloy around a mutually movable deflection element thereby constituting an operating mechanism. SOLUTION: A thin wire 1 of shape memory alloy is wound, by a large number of turns, around a mutually movable tubular deflection elements 2, 3 to constitute an operating mechanism. A cooling medium flows through a supply port 5 into a shielded casing 4 in the direction of arrow 12 to cool the wire 1. When a critical transformation temperature is reached, the wire 1 elongates to generate a tensile force acting in the direction for separating elements 2, 3. On the contrary, the wire 1 contracts upon heating to generate a compressive force for bringing close the elements 2, 3. Tensile force or compressive force thus generated is transmitted to the outside through a transmission element 7. The operating rate is controlled depending on the flow rate of cooling medium and the temperature difference between the cooling medium and wire 1. | ||||||
| 134 | Micro-expansion apparatus | JP24892191 | 1991-09-27 | JP2500128B2 | 1996-05-29 | FUJII HIROYUKI; ABE MAMORU |
| Herein disclosed is a finely displacing device for establishing a micro displacement ( W h<5>) of a length (H), which device comprises: first and second members (1,2) arranged to face each other in their thickness directions and fixed directly or indirectly to each other in their portions (6); and input means (3) for changing gap between the two members by deforming the same elastically, wherein distance (H) between the mutually fixed portions (6) and a portion (1a) of the first member other than its fixed portion, as taken in the thickness direction of the two members, is used as the length (H) for establishing the micro displacement ( W h<5>). Also disclosed is a finely displacing method for establishing a micro displacement of length. |
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| 135 | Optically strained piezoelectric element | JP18135694 | 1994-08-02 | JPH0846259A | 1996-02-16 | SAITO SUSUMU; KAMETANI MICHIKO |
| PURPOSE:To increase the absorption efficiency of irradiation light, and improve response property, by forming surface roughness having size of specified width for a specified wavelength of the irradiation light, on the surface of an optically strained piezoelectric element. CONSTITUTION:A mercury lamp of 500W is used as a light source 1. A PLZT specimen 5 as an optical strain piezoelectric element is vertically irradiated with a parallel beam through an infrared cutting filter 2 and two bandpass filters 3, 4. The center wavelength is 365nm, and the bandwidth is 61nm. In an optical strain piezoelectric element, the surface is irradiated with a light beam having a specified wavelength, and strain effect is generated. Surface roughness Ra is formed on the irradiation surface of the element. The value Ra is experimentally confirmed as follows for the light wavelength lambda; 0.85lambda<=Ra<=1.15lambda. Thereby the absorption efficiency of irradiation light of the surface is increased, and the response to strain generation due to light irradiation can be improved, so that the optically strained piezoelectric element can be applied to the driving device of a micromachine. | ||||||
| 136 | Method for continuously manufacturing microstructural body and thin film semiconductor device on oblong substrate | JP14226093 | 1993-06-14 | JPH06224111A | 1994-08-12 | SUCHIIBUN SHII JIYAKOBUSEN |
| PURPOSE: To form a fine pattern on an oblong substrate work by depositing a resist on a long bar, setting and forming a pattern by exposure, developing the resists, and etching/depositing the material on the bar while moving the bar in a longitudinal direction along a predetermined path. CONSTITUTION: A microstructural body or a semiconductor device is continuously manufactured on a strand or a filament 4 wound around a distribution reel 6 and having flexibility in a transversal direction. The filament 4 passes through a chamber 20. A semiconductor material 24 is deposited on the filament 4 by sputtering to form a semiconductor layer and an insulation material 36 is sputtered on the semiconductor layer in the chamber 32. The filament 4 enters a beam resist bath 48 by rollers 50 and emerges therefrom. In the next station of a chamber 56, a beam resist solvent is baked out. An electron beam generator 72 is disposed in an electron beam vacuum chamber 68. | ||||||
| 137 | Method for manufacturing micro-structure by using non-planar exposure beam lithography and apparatus therefor | JP1296892 | 1992-01-28 | JPH06134586A | 1994-05-17 | SUCHIIBUN SHII YAKOBUSEN; DEBITSUDO ERU UERUZU; KURAAKU DEEBISU; JIYON II UTSUDO |
| PURPOSE: To make it possible to manufacture micro-structures by using lithography technology by providing the above apparatus with a control means for generating a first control signal, supplying the signal to a first means, generating a second control signal and supplying the signal to a second means. CONSTITUTION: A computer 28 supplies the signals to a biaxial servo controller 68 in the form of command for the movement of a rotary stage 48 and a linear stage 56. These signals are supplied to an amplifier 72 and thereafter, an amplifier 72 supplies a rotation command signal to a rotation stage 48 and a linear command signal to a linear stage 56, by which the desired motions of both stages can be generated. As both stages are operated, both stages generate the feedback signals indicating the respective motion degrees which are supplied to the biaxial servo controller 68. The signals are then supplied to the computer 28. The feedback signals are compared with the command signals and are subjected to correction at need. | ||||||
| 138 | Incorporating a method for manufacturing the same, and the same article of the temperature-sensitive operating goods and the goods equipment | JP50040191 | 1990-10-16 | JPH0631735B2 | 1994-04-27 | ハーナー，レスリー，エル．; フランツ，エール，エル． |
| 139 | JPH0526032B2 - | JP14103483 | 1983-08-03 | JPH0526032B2 | 1993-04-14 | HOSODA JUJI; FUJE MASAKATSU; PPONMA KAZUO; IWAMOTO TARO; KAMESHIMA KOJI; KOJIMA YOSHIO; NAKANO YOSHUKI |
| 140 | JPH05500420A - | JP50040191 | 1990-10-16 | JPH05500420A | 1993-01-28 | |
