序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
101 Waveguide coupler and method for making same US10146346 2002-05-15 US06690863B2 2004-02-10 Shrenik Deliwala
An optical device includes a semiconductor layer and a polysilicon coupler. The semiconductor layer includes at least one etched portion between first and second unetched portions. A first optical waveguide includes the first unetched portion and a first total internal reflection (TIR) boundary between the first unetched portion and the at least one etched portion. A second optical waveguide includes the second unetched portion and a second TIR boundary between the at least one unetched portion and the second etched portion. A polysilicon coupler at least partially overlaps the etched portion of the semiconductor layer. The polysilicon coupler optically couples the first optical waveguide and the second optical waveguide, wherein light can flow from the first optical waveguide via the polysilicon coupler portion to the second optical waveguide.
102 Optical fiber apparatus and associated method US09859338 2001-05-17 US06690844B2 2004-02-10 Shrenik Deliwala
An apparatus and associated method for altering the propagation constant of a region of filtering propagation constant in an optical waveguide. The method comprising positioning an electrode of an electrode shape proximate the waveguide. An altered region of filtering propagation constant is projected into the waveguide that corresponds, in shape, to the electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of filtering propagation constant is controlled by varying the voltage. Such filter embodiments as an Infinite Impulse Response filter and a Finite Impulse Response filter may be provided.
103 Shallow photonic bandgap device US10078972 2002-02-19 US06671443B2 2003-12-30 Shrenik Deliwala
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
104 Interferometer and method of making same US10146322 2002-05-15 US06658173B2 2003-12-02 Shrenik Delwala
An interferometer includes at least one optical waveguide, a first passive optical waveguide segment, and a second passive optical waveguide segment. The optical waveguide includes at least one gate oxide layer deposited on a semiconductor layer of a wafer and a polysilicon layer deposited on the gate oxide layer. The first passive optical waveguide segment includes a first portion of the polysilicon layer that projects a first region of static effective mode index within the optical waveguide. The second passive optical waveguide segment includes a second portion of the polysilicon layer that projects a second region of static effective mode index within the optical waveguide. A length of the first passive optical waveguide segment equals a length of the second passive optical waveguide segment. The first and second passive optical waveguide segments are coupled to each other and together form at least in part the optical waveguide. The first and second passive optical waveguide segments and the optical waveguide are each formed at least in part from the semiconductor layer.
105 Optical modulator apparatus and associated method US09859297 2001-05-17 US06654511B2 2003-11-25 Shrenik Deliwala
An apparatus and associated method for modulating the propagation constant of a region of modulating propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. The region of modulating propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of modulating propagation constant is controlled by varying the voltage.
106 Interferometer apparatus and associated method US09859786 2001-05-17 US06646747B2 2003-11-11 Shrenik Deliwala
An optical interferometer apparatus and associated method including a beamsplitter, a first mirror, a second mirror, and a delay element. The beamsplitter splits an input optical signal into a first optical signal that flows along a first optical path and a second optical signal that flows along a second optical path. The first mirror reflects the first signal in the first path towards the beamsplitter to form a first return path. The second mirror reflects the second signal in the second path towards the beamsplitter to form a second return path. The delay element includes the first mirror that adjusts a time required for the first signal to flow from the beamsplitter along the first path, be reflected by the first mirror, and return along the first return path to the beamsplitter. The waveguide includes a region of changeable propagation constant disposed along a length of the waveguide.
107 Method and apparatus for electro-optic delay generation of optical signals US10223848 2002-08-19 US06640020B2 2003-10-28 Stanislav I. Ionov
An optical delay generator includes a waveguide made from electro-optically active material which contains a chirped distributed Bragg reflector. An electric field generated across the waveguide causes the index of refraction within the waveguide to change. A change in the index of refraction results in a change in the point at which light is reflected from the chirped distributed Bragg reflector within the waveguide, thus providing a controllable delay for optical pulses. Optical pulse position modulation is provided by using the optical delay generator to control the delay imparted on each pulse within a stream of equally-spaced optical pulses.
108 Optical NRZ-RZ format converter US09852175 2001-05-10 US06625338B2 2003-09-23 Alexandre Shen; Fabrice Devaux; Michael Schlak; Tolga Tekin
Converter of an NRZ signal with a bit duration T comprising an interferometric structure (10) with two arms (9, 11) equipped with a medium (13, 15) with an index that varies depending on the optical power passing through the said medium. The NRZ signal to be converted is input into each of the arms (9, 11). The output signal (7) from the structure is reinput through a means (16) introducing a delay of T/2 in one of the arms (11). The signal at the output (7) is then the NRZ signal converted to the RZ format.
109 RF combiner based on cascaded optical phase modulation US09876017 2001-06-06 US06587256B2 2003-07-01 James E. Leight; David L. Rollins; Richard A. Fields
An RF combiner (10) that combines a plurality of RF signals (12) in the optical domain. The combiner (10) includes a single optical source (14) that generates an optical beam (16). The optical beam (16) is directed through a series of optical modulators (20), such as optical phase modulators. Each modulator (20) is responsive to an RF signal (12) that is to be combined with the other RF signals (12). Each modulator (20) modulates the optical signal (16) with the RF signal (12) so that the modulations combine in an additive manner. A single optical phase demodulator (32) is used to demodulate the composite phase modulated optical beam (16) to generate the combined RF signal (34). Suitable delay devices (50) can be used between the optical modulators (20), or the RF signals can be matched so that the RF signals combine in phase.
110 Optical coupler having evanescent coupling region US10074408 2002-02-12 US20030039439A1 2003-02-27 Shrenik Deliwala
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
111 Anisotropic etching of optical components US09991371 2001-11-10 US20030032286A1 2003-02-13 Shrenik Deliwala; Robert Keith Montgomery
An anisotropically etched prism assembly including a device portion, a light coupling portion, and an alignment portion. The anisotropically etched prism assembly having a plurality of optical devices arranged in a first fixed pattern. Each pair of said plurality of optical devices spaced a first prescribed distance apart. The light coupling portion including a plurality of anisotropically etched prisms. Each one of the plurality of anisotropically etched prisms is arranged in second fixed pattern so as to correspond with a respective one of the plurality of optical devices. Each one of the pairs of said plurality of anisotropically etched prisms are spaced a second prescribed distance apart, the second prescribed distance substantially equals the first prescribed distance. The alignment portion aligns the light coupling portion and the device portion. Each one of said plurality of anisotropically etched prisms are aligned with a respective one of said plurality of optical devices.
112 Programmable delay generator apparatus and associated method US09859321 2001-05-17 US20030026531A1 2003-02-06 Shrenik Deliwala
An apparatus and associated method for changing the propagation constant of a region of delaying propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. A changeable region of delaying propagation constant is projected into the waveguides that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant level of the region of delaying propagation constant is controlled by varying the voltage. Light passing through the region of delaying propagation constant is delayed by a controllable amount.
113 Self-aligning modulator method and associated apparatus US09859769 2001-05-17 US20030026514A1 2003-02-06 Shrenik Deliwala
A self-aligned optical modulator that modulates an input optical signal in order to generate a modulated output optical signal includes an optical modulator device including a waveguide, a first modulating electrode, a second modulating electrode, and a two-dimensional electron (hole) gas (2DEG) proximate the first modulating electrode, the waveguide includes an input port wherein the input optical signal is introduced into the waveguide, an output port wherein the modulated output optical signal exits the waveguide, and a region of modulating propagation constant disposed along a first length of the waveguide and between the input port and the output port, wherein the input optical signal is guided by total internal reflection in the waveguide, and the waveguide is formed at least in part from an active semiconductor. The first modulating electrode is positioned proximate a first surface of the region of modulating propagation constant and electrically separated from an active semiconductor. The second modulating electrode is in electrical contact with the active semiconductor and disposed on a first side of the region of modulating propagation. The two-dimensional electron (hole) gas (2DEG) proximate the first modulating voltage is applied between the first modulating electrode and the second modulating electrode, wherein modulation of the voltage by the optical modulation device causes a corresponding modulation of the free carrier distribution which, in turn, causes corresponding modulation of a propagation constant level in the region of modulating propagation constant. A first deflector deflects light in a first lateral direction within the waveguide, and a second deflector configured to deflect light in a second lateral direction towards the waveguide wherein the deflection of the first deflector or the second deflector acts to direct light approaching the region of modulating propagation constant towards the region of modulating propagation constant.
114 Highly linear electro-optic delay generator for all-optical pulse-position modulation US09896953 2001-06-29 US20030025986A1 2003-02-06 Stanislav I. Ionov
An optical delay generator comprises a first waveguide made from electro-optically active material resonantly coupled to a second non-electro-optically active waveguide. The first waveguide contains a chirped distributed Bragg reflector structure which reflects optical signals at a specific wavelength at a specific reflection point within the structure. An electric field applied to the first waveguide changes the refractive index of the electro-optically active material and thus shifts the reflection point. Optical signals reflecting from the reflection point are resonantly coupled into the second waveguide, and are thus not affected by the electric field applied to the first waveguide. The controllable optical delay applied to the optical signals results from control over the reflection point and the round-trip travel time for an optical signal forward propagating in the first waveguide, being reflected at the reflection point, and backward propagating in the second waveguide.
115 Method for forming passive optical coupling device US10077026 2002-02-15 US20030013304A1 2003-01-16 Shrenik Deliwala
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
116 Polyloaded optical waveguide devices and methods for making same US10146351 2002-05-15 US20030003736A1 2003-01-02 Shrenik Delwala
A passive optical waveguide device deposited on a wafer that includes an insulator layer and an upper semiconductor layer formed at least in part from silicon. The upper silicon layer forms at least part of an optical waveguide, such as a slab waveguide. The passive optical waveguide device includes an optical waveguide, a gate oxide, and a polysilicon layer. The optical waveguide is formed within the upper semiconductor layer, a gate oxide layer that is deposited above the upper semiconductor layer, and a polysilicon layer that is deposited above the gate oxide layer. The polysilicon layer projects a region of static effective mode index within the optical waveguide. The region of static effective mode index has a different effective mode index than the optical waveguide outside of the region of static effective mode index. The region of static effective mode index has a depth extending within the optical waveguide. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time.
117 Dynamic gain equalizer method and associated apparatus US09859279 2001-05-17 US06493502B1 2002-12-10 Shrenik Deliwala
An apparatus and associated method for altering the propagation constant of a region of equalizing propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. An altered region of equalizing propagation constant is projected into the waveguide that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of equalizing propagation constant is controlled by varying the voltage.
118 Optical NRZ-RZ format converter US09852175 2001-05-10 US20020018612A1 2002-02-14 Alexandre Shen; Fabrice Devaux; Michael Schlak; Tolga Tekin
Converter of an NRZ signal with a bit duration T comprising an interferometric structure (10) with two arms (9, 11) equipped with a medium (13, 15) with an index that varies depending on the optical power passing through the said medium. The NRZ signal to be converted is input into each of the arms (9, 11). The output signal (7) from the structure is reinput through a means (16) introducing a delay of T/2 in one of the arms (11). The signal at the output (7) is then the NRZ signal converted to the RZ format.
119 Optical modulator for an optical transmitter US979491 1992-11-19 US5359449A 1994-10-25 Hiroshi Nishimoto; Hironao Hakogi; Takatoshi Minami
An optical transmitter having a Mach-Zehnder optical modulator comprising a signal electrode fed with a driving signal for effecting modulation and a bias electrode for operating point control. Because the signal electrode and the bias electrode are independent of each other, a driving circuit and the signal electrode can be connected in a DC setup. This permits stable operating point control and improves waveform characteristics.
120 High-speed analog-to-digital converter US15658069 2017-07-24 US10139704B1 2018-11-27 Bishara Shamee; Steven R. Wilkinson; Makan Mohageg
A high-speed analog-to-digital converter can produce a digital signal representative of an analog input electrical signal. An optical amplitude modulator can modulate an input optical pulse train using the analog input electrical signal. An optical splitter can split the modulated optical pulse train into a plurality of modulated optical pulse trains. Optical path delays can stagger in time the modulated optical pulse trains to form a plurality of time-staggered modulated optical pulse trains. Demodulators can detect and filter the time-staggered modulated optical pulse trains to form a respective plurality of time-averaged voltages. Analog-to-digital converters can output a respective plurality of digital time series representative of the respective time-averaged voltages. An interleaver can aggregate the plurality of digital time series to form the digital signal, which has a sample rate greater than a repetition rate of the input optical pulse train.
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