| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Voltage controlled oscillator integrated circuit | US882577 | 1997-06-25 | US5920235A | 1999-07-06 | Ronald Douglas Beards; Samuel Alfred Tiller |
| A voltage controlled oscillator has a cross-coupled negative resistance cell formed as an integrated circuit connected to off-chip components of a high-Q resonant tank circuit. To counteract spurious oscillations brought about by package parasitics caused by the interconnection of the chip to the external components, the cell is provided with a degeneration impedance. Typically, a pure inductor is used if all the elements of the tank circuit are off-chip. In a case where the tank circuit includes an on-chip fixed capacitor, the degeneration impedance may take the form of a capacitor. | ||||||
| 102 | Bipolar junction transistor (BJT)--resonant tunneling diode (RTD) oscillator circuit and method | US879456 | 1997-06-20 | US5883549A | 1999-03-16 | Hector J. De Los Santos |
| A BJT, an inductor, and an RTD are configured to define a negative resistance oscillator circuit that is suitable for monolithic integration. The BJT is forward biased so that the RTD operates at a DC operating point (I.sub.Q,V.sub.Q) on its characteristic I-V curve in its negative differential resistance region. The thermal noise inherent in the circuit causes it to start oscillating about the DC operating point (I.sub.Q,V.sub.Q) where the RTD's negative resistance R.sub.n provides positive feedback that amplifies the oscillations until equilibrium is established thereby producing a sinusoidal waveform. The low power BJT/RTD oscillator operates at power levels approximately one-tenth those of known integrated feedback oscillators and oscillates at frequencies in the hundreds of Ghz range that are currently only achievable using waveguide oscillators. | ||||||
| 103 | Variable propagation delay digital signal inverter | US158126 | 1993-11-24 | US5479129A | 1995-12-26 | Francisco J. Fernandez; Thayamkulangara R. Viswanathan |
| An electronically-controlled variable propagation delay digital signal inverter comprises a digital signal inverter having an input signal port and an output signal port, and an electronically-controlled negative resistance (ECNR). The ECNR is coupled to the output port of the inverter in a configuration so as to render the propagation delay of the digital signal inverter capable of being varied by varying the resistance of the ECNR. The electronically-controlled variable propagation delay digital signal inverter may be included in a ring oscillator configuration. | ||||||
| 104 | Voltage-controlled oscillator | US169565 | 1988-03-17 | US4801898A | 1989-01-31 | Katsuki Obayashi |
| A voltage-controlled oscillator includes a negative resistance generator, a resonant circuit, a first series circuit, a second series circuit, and a third series circuit. The first series circuit controls an oscillation frequency for changing a resonant frequency of the resonant circuit, and the second series circuit modulates this frequency. The third series circuit consists of a capacitor and a variable capacitance diode to which the modulation signal is supplied. The third series circuit changes the resonant frequency of the resonant circuit in a direction for cancelling a change in modulation sensitivity caused by the second series circuit. | ||||||
| 105 | Frequency synthesizer having jitter compensation | US545552 | 1983-10-26 | US4599579A | 1986-07-08 | Kenneth D. McCann |
| A frequency synthesizer includes frequency reduction means which includes a pulse swallow circuit PS which cancels cycles from the frequency Fo under the control of a rate multiplier RM. To prevent phase jitter at the output of phase comparator PC due to the cancelled cycles, a compensation signal HP is derived from a swallow command signal A and from a multiplying fraction n/x of the rate multiplier. In order to keep the DC level of the signal HP constant, the signal HP is bidirectional with respect to a mid-point voltage level and the total area of the pulses in one direction is the same as the total area of the pulses in the other direction. The invention is applicable to both phase locked loop synthesizers (FIG. 2) and direct synthesizers (FIG. 11). | ||||||
| 106 | Hermetically sealed microwave solid-state oscillator with dielectric resonator tuned by electromagnetically coupled terminating admittance | US660002 | 1984-10-10 | US4588964A | 1986-05-13 | Kenji Hirai; Hideki Torizuka |
| A microwave solid-state oscillator includes a casing hermetically enclosing a microwave oscillation device and a dielectric resonator electromagnetically coupled with the microwave oscillation device, an output terminal leading out an oscillation output from said casing, and a microwave terminal electromagnetically coupled to the dielectric resonator, one end of which is connected to a microwave line having a terminating admittance at the outside of the casing. | ||||||
| 107 | Fin-line oscillator | US523530 | 1983-08-16 | US4567450A | 1986-01-28 | Laszlo Szabo; Klaus Schunemann |
| The fin-line oscillator includes a packaged diode as an active element and an impedance-matching network for matching the diode to a load and determining the frequency.In a first embodiment, the diode package (5) is mounted in a cutoff waveguide (4) connected with the waveguide (1) containing the fin line. The fins (2) of the fin line extend a given distance into the cutoff waveguide.In further embodiments, the diode package is mounted in or on the substrate on which the fins of the fin line are deposited. | ||||||
| 108 | Dielectric resonator controlled planar IMPATT diode oscillator | US388762 | 1982-06-15 | US4514707A | 1985-04-30 | Michael Dydyk; Herbert W. Iwer |
| An IMPATT diode oscillator wherein the diode is coupled to a first transmission line in turn coupled to a bias port at one end and to a coupled line transformer formed with a second transmission line at the other. A stabilizing load is coupled to the first transmission line between the diode and the bias port. A first tunable resonator controlling the fundamental frequency of the oscillator and a second tunable resonator controlling the second harmonic frequency of the oscillator are coupled to the first transmission line between the diode and the stabilizing load so that independent control of the fundamental and the second harmonic is attained in a temperature stable device. | ||||||
| 109 | Oscillator utilizing inductive parameter of transistor | US445337 | 1982-11-29 | US4507622A | 1985-03-26 | Robert N. Muth |
| An oscillator having sufficient accuracy and precision for use in aircraft microwave-landing systems is constructed without the use of an external inductor. A resonant tank circuit comprising both capacitance and inductance is attained by the use of inductance found internally in the base-emitter junction of a transistor suitably biased for operation at the frequencies of a microwave landing system. A transistor having greater-than-unity gain in the oscillation-frequency range is selected for which the angle of the reflection coefficient of the base-emitter junction is positive in the oscillation-frequency range. | ||||||
| 110 | Semiconductor devices | US41699273 | 1973-11-19 | US3836988A | 1974-09-17 | BOARD K |
| A beam lead contact arrangement for a Gunn diode, having a lightly doped active layer on a heavily doped substrate. One contact connects to the top surface of the active layer, while the other contact is connected to the heavily doped substrate through a hole in the active layer. The second contact also makes contact to the active layer, but current flow is vertical through the layer due to spreading resistance.
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| 111 | Three-terminal bulk negative resistance device operable in oscillatory and bistable modes | US3588736D | 1969-06-30 | US3588736A | 1971-06-28 | MCGRODDY JAMES C |
| THE NEGATIVE RESISTANCE CIRCUIT INCLUDES A BODY OF N-TYPE GALLIUM ARSENIDE HAVING AN EXCESS CARRIER CONCENTRATION (NO) AND LENGTH (L) SUCH THAT THE BODY EXHIBITS BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY BUT DOES NOT INHERENTLY PRODUCE TRAVELING HIGH FIELD DOMAINS. A P-TYPE CONTACT IS MADE BETWEEN THE FIRST REGION AND CATHODE TO FORM A SECOND REGION OF HIGH RESISTANCE. THE P CONTACT IS SELECTIVELY BIASED TO CAUSE A HIGH FIELD TO SHIFT BETWEEN THE SECOND REGION AND A THIRD REGION BETWEEN THE FIRST REGION AND ANODE. THE SHIFTING BETWEEN REGIONS IS CONTROLLED BY THE BIAS TO PRODUCE EITHER HIGH FREQUENCY OSCILLATIONS OR BISTABILITY.
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| 112 | Method for increasing the efficiency of lsa oscillator devices by uniform illumination | US3579143D | 1968-11-29 | US3579143A | 1971-05-18 | HAYDL WILLIAM H |
| The frequency of oscillations can be controlled by applying uniform illumination to at least one surface of photoconducting semiconductors which exhibit a negative differential conductivity and traveling regions of space charge. The method is particularly useful in Gunn effect devices utilizing gallium arsenide (GaAs), but applies also to other photoconducting semiconductors exhibiting the Gunn effect and also to piezoelectric semiconductors exhibiting traveling domains due to acoustoelectric interactions between acoustic waves and the charge carriers. Also described is a principle for reducing the fluctuations in the carrier density present in the crystalline semiconductor solid by reducing the inhomogeneities as a percentage of the total carrier density by uniformly illuminating the crystal. The reduction in the present fluctuations in the carrier density is of particular significance in gallium arsenide Gunn devices operating in the LSA mode.
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| 113 | Voltage controllable variable frequency gunn oscillator of graded gaasp composition | US3516016D | 1968-05-22 | US3516016A | 1970-06-02 | MIGITAKA MASATOSHI |
| 114 | Oscillation generator | US36308629 | 1929-05-14 | US1775752A | 1930-09-16 | EDWARDS WILLIAM H |
| 115 | 전압제어 발진기 | KR1020020056307 | 2002-09-17 | KR100477210B1 | 2005-03-21 | 치바유타카; 노미히로키; 이카라시야스히로 |
| 본 발명의 목적은 버랙터 다이오드에 인가하는 제어전압에 대한 발진주파수의 변화감도를 높이는 것이다. 발진 트랜지스터(1)와, 버랙터 다이오드(3)를 가짐과 동시에, 발진 트랜지스터(1)에 결합된 공진회로(2)와, 공진회로(2)의 공진주파수를 전환하는 스위치 다이오드를 구비하고, 공진회로(2)는 버랙터 다이오드(3)의 캐소드를 직류적으로 접지하는 제 1 스트립 도체(4)와, 버랙터 다이오드(3)의 캐소드를 발진 트랜지스터(1)에 결합하는 제 2 스트립 도체(5)로 이루어지고, 스위치 다이오드(7)를 제 1 스트립 도체(4)에 고주파적으로 병렬 접속함과 동시에, 캐소드를 접지하고, 버랙터 다이오드(3)의 용량값을 바꾸기 위한 제어전압을, 초크인덕터(11)를 거쳐 버랙터 다이오드(3)의 캐소드와 제 2 스트립 도체(5)와의 접속점에 인가하였다. | ||||||
| 116 | 발진회로 | KR1019960002202 | 1996-01-31 | KR100191267B1 | 1999-06-15 | 조근래 |
| 본 발명은 출력 정전보호수단에 정전기의 양을 감소시켜 주기 위한 수단을 부가하여 출력인버터가 정전기에 대하여 완벽하게 보호되는 발진회로에 관한 것이다. 본 발명의 발진회로는 수정발진기의 입력핀에 인가되는 신호를 입력하여 소정의 내부 클럭신호를 출력하기 위한 다수의 인버터와, 수정발진기의 입력핀에 인가되는 정전기를 전원전압 또는 접지전압으로 패스시켜 인버터를 보호하기 위한 입력 정전보호수단과, 수정발진기의 출력핀에 인가되는 정전기를 바이패스시켜 주기 위한 바이패스수단과, 상기 바이패스수단과 출력 인버터의 출력단사이에 연결된 정전기감소수단으로 구성된 출력 정전보호수단으로 이루어졌다. | ||||||
| 117 | 발진기 | KR1019880017763 | 1988-12-29 | KR100129039B1 | 1998-10-01 | 제프리더블유퍼킨스 |
| 내용없음 | ||||||
| 118 | 발진회로 | KR1019960002202 | 1996-01-31 | KR1019970060667A | 1997-08-12 | 조근래 |
| 본 발명은 출력 정전보호수단에 정전기의 양을 감소시켜 주기 위한 수단을 부가하여 출력인버터가 정전기에 대하여 완벽하게 보호되는 발진회로에 관한 것이다. 본 발명의 발진회로는 수정발진기의 입력핀에 인가되는 신호를 입력하여 소정의 내부 클럭신호를 출력하기 위한 다수의 인버터와, 수정발진기의 입력핀에 인가되는 정전기를 전원전압 또는 접지전압으로 패스시켜 인버터를 보호하기 위한 입력 정전보호수단과, 수정발진기의 출력핀에 인가되는 정전기를 바이패스시켜 주기 위한 바이패스수단과, 상기 바이패스수단과 출력 인버터의 출력단사이에 연결된 정전기감소수단으로 구성된 출력 정전보호수단으로 이루어졌다. | ||||||
| 119 | 초고주파발진기의 기생신호억제회로 | KR1019910011043 | 1991-06-29 | KR100087972B1 | 1995-08-17 | 윤기호 |
| 120 | 원격 제어기기의 반송파주파수 변경방법 및 변경장치 | KR1019910018184 | 1991-10-16 | KR1019930009225A | 1993-05-22 | 김효석 |
| 본 발명의 원격 제어기기의 반송파 주파수 변경방법 및 변경장치는, 리모콘에서 적외선으로 송신되는 동작 명령에 따라 원격제어되는 각종 원격 제어기기에서 동작명령을 변조하는 반송파의 주파수를 변결할 수 있도록 하는 것이다. 송신부에서 송신되는 약 940~950mm의 파장을 가지는 적외선과 형광등에서 출력되는 약 900mm의 파장을 가지는 광이 상호간에 간섭을 발생하고, 이로 인하여 송신부에서 송신된 적외선이 수신부에 원활하게 수신되지 않으며, 기기가 오동작을 하게 되는 것을 해결하기 위한 본 발명은, 적외선 수신부(24)가 수신하는 신호가 잡음신호인지를 마이콤(21)이 판별하고, 설정된 시간이상으로 계속 잡음신호가 수신될 경우에 반송파 주파수 선택부(25)를 제어하여 적외선 수신부(24)가 수신할 적외선의 반송파 주파수를 변경하게 함과 아울러 표시부(26)에 반송파 주파수의 변경을 표시하며, 송신부의 반송파 주파수의 변경 요청에 따라 사용자가 반송파 주파수 선택부(15)를 조작하게 하고, 반송파 주파수 선택부(15)가 선택한 반송파의 주파수로 동작 명령을 변조하여 송 하게 함으로서 송신부에서 송신되는 동작명령이 원활하게 수신부로 수신되고, 이로 인하여 오동작없이 정확히 동작할 수 있게 된다. | ||||||
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