Amorphous thin film solar cell
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CONSTITUTION: On a transparent glass substrate 1, a grid electrode Al/Ag2 is formed by evaporation using a mask, and an ITO transparent electrode 3 is formed into a given thickness by a sputtering apparatus. Then, the substrate 1 is set in a plasma CVD apparatus and treated by a high frequency to form a P
+ type a-BP film 4 into a given thickness in order to obtain a P type amorphous semiconductor. Subsequently, by plasma CVD, an I type a-Si:F:H film 5 is formed into a given thickness and moreover, an N type doping agent is added to form an N
+ type a-Si:F:H film 6 into a given thickness. Then, by an electron beam evaporation apparatus, a back surface electrode 7 is formed and finally, by a CCD apparatus, an Si-O-N film 8 is formed into a given thickness in order to achieve passivation for a solar cell. Thereby, selection of the PIN layer structure is facilitated.
COPYRIGHT: (C)1981,JPO&Japio，下面是Amorphous thin film solar cell专利的具体信息内容。
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