Thin-film solar cell
专利汇可以提供Thin-film solar cell专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain the cell having large conversion efficiency by a method wherein the solar cell of PIN, PN N, NP P and the like is prepared by using a thin amorphous SiocGe1-x film and, is addition, the Si density of the layer of one of the above is increased gradually toward a photoreceiving surface. CONSTITUTION:To the back surface of a glass substrate 11 to be the photoreceiving surface is connected transparent conductive film 12 to be a surface electrode, whereon a P type thin amorphous Si film 13 is formed. Next, on the film 13, an I type thin amorphous SixGe1-x or N type thin amorphous SixGe1-x film 14 which is not doped is formed through lamination with the composition ratio X thereof being decreased gradually. This may be conducted by changing the ratio of an ambient gas used when the thin film is formed to SiH4GeH4. Later, to the surface of the film 14 is connected an N type thin amorphous Si0.5Ge0.5 film 15, whereto the back-surface electrode 16 is fitted. By this constitution, the sensitivity on the side of wavelength longer than 0.6mum is improved and the conversion efficiency is also raised to about 2.9%.，下面是Thin-film solar cell专利的具体信息内容。
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