专利汇可以提供Amorphous thin film solar battery专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain an amorphous thin film solar battery having high photoelectric conversion efficiency and large area with preferable reproducibility by employing amorphous high molecular nitride formed by plasma synthesization as a Schottky barrier material. CONSTITUTION:An Al-Ag grid electrode 2 is evaporated with mask on a glass substrate 1, and an In2O3-SnO2 film 3 is formed thereon. Then, an amorphous high molecular nitride film 4 is formed by plasma synthesization thereon. Thereafter, amorphous Si film (a-SiFX) is formed thereon. Subsequently, an N type amorphous Si film [a-SiFX(n )] 7 is formed thereon. Then, an Al-Ag back electrode 8 is evaporated with mask, and an Si3N4 film 9 is coated thereon. In this manner, a Schottky barrier is formed between the layers 4 and 6, and a photovoltaic force is picked up between the electrodes 2 and 8 in response to the incident light irradiated from the side of the substrate 1.,下面是Amorphous thin film solar battery专利的具体信息内容。
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