Removal of static electricity of wafer
专利汇可以提供Removal of static electricity of wafer专利检索，专利查询，专利分析的服务。并且PURPOSE:To lower the potential of static electricity in a short period of time by a method wherein, when the static electricity, generated on the wafers which are made of the material having a pyro-electric effect, is removed in the process of manufacture of an optical integrated circuit, the wafers are treated in the shower of ionized air. CONSTITUTION:When a LiNbO3 substrate 1 is dried up by heating, the static electricity of potential of about 1500KV is charged. Said LiNbO3 1 is placed on a base stand 3 with the surface, on which an optical waveguide and the like will be formed, is facing upward. Then, ionized air having the humidity atmosphere of 40-95% and the temperature of 25 deg.C or below is fed into a container 2. As a result, the static electricity is reduced to the potential of 200V or below within about 10minutes.，下面是Removal of static electricity of wafer专利的具体信息内容。
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6 热电元件
