Driving circuit of static induction transistor
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CONSTITUTION: An inductance element 10 is inserted in series into the gate of an SIT8 and constitutes a series resonance circuit together with a resistance 4 and the input capacity Ciss of the SIT8. The resistance value of the resistance 4 and inductance value L of the inductance element 10 are set in such a way that the series resonance circuit can operate at a critical condition. As a result, the peak value of the electric current at the time of turning on swing elements 6 and 7 can be suppressed without sacrificing the swing speed. Therefore, the loss of such a driving circuit can be reduced and plural SITs can be driven by means of one driving circuit.
COPYRIGHT: (C)1986,JPO&Japio，下面是Driving circuit of static induction transistor专利的具体信息内容。
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6 电池单元
